NTMFS4H013NF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4H013NF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 269 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 55.1 ns
Cossⓘ - Выходная емкость: 2537 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0009 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4H013NF
NTMFS4H013NF Datasheet (PDF)
ntmfs4h013nf.pdf

NTMFS4H013NFPower MOSFET25 V, 269 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOT
ntmfs4h01nf.pdf

NTMFS4H01NFPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) T
ntmfs4h01n.pdf

NTMFS4H01NPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications
ntmfs4h02nf.pdf

NTMFS4H02NFPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceswww.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on)
Другие MOSFET... NTMFS4C028N , NTMFS4C029N , NTMFS4C032N , NTMFS4C054N , NTMFS4C250N , NTMFS4C290N , NTMFS4C302N , NTMFS4C59N , IRF1405 , NTMFS5113PL , NTMFS5C404N , NTMFS5C406N , NTMFS5C406NL , NTMFS5C410N , NTMFS5C426N , NTMFS5C430N , NTMFS5C430NL .
History: STF32N65M5 | IXTH90P10P | 2SK1206
History: STF32N65M5 | IXTH90P10P | 2SK1206



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