NTMFS5C628N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5C628N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.8 nS

Cossⓘ - Capacitancia de salida: 1680 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: DFN5

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NTMFS5C628N datasheet

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 ntmfs5c628n.pdf pdf_icon

NTMFS5C628N

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

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 ntmfs5c628nlt1g.pdf pdf_icon

NTMFS5C628N

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60

 0.2. Size:203K  1
 ntmfs5c628nt1g.pdf pdf_icon

NTMFS5C628N

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

 0.3. Size:91K  onsemi
 ntmfs5c628nl.pdf pdf_icon

NTMFS5C628N

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60

MOSTRAR MÁS

Otros transistores... NTMFS5C430NL, NTMFS5C442N, NTMFS5C450N, NTMFS5C450NL, NTMFS5C456NL, NTMFS5C460NL, NTMFS5C468NL, NTMFS5C609NL, IRF3205, NTMFS5C628NL, NTMFS5C645NL, NTMFS5C646N, NTMFS5C670N, NTMFS5C673N, NTMFS5C673NL, NTMFS5C677NL, NTMFS5C682NL