NTMFS5C645NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles

MOSFET Power, Single,N-Channel60 V, 5.0 mW, 93 ANTMFS5C646NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 5.0 mW @ 10 V 93 ACompliantMAXIMUM RATINGS (T

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.7 mW @ 10 V60 V