NTMFS5C645NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C645NL
Código: 5C645L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 34 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS5C645NL
NTMFS5C645NL Datasheet (PDF)
ntmfs5c645nl.pdf
NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60
ntmfs5c645nlt3g.pdf
NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60
ntmfs5c645nlt1g.pdf
NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60
ntmfs5c646nlt3g.pdf
NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles
ntmfs5c646nlt1g.pdf
NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles
ntmfs5c646n.pdf
MOSFET Power, Single,N-Channel60 V, 5.0 mW, 93 ANTMFS5C646NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 5.0 mW @ 10 V 93 ACompliantMAXIMUM RATINGS (T
ntmfs5c646nl.pdf
NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.7 mW @ 10 V60 V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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