NTMFS5C646N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5C646N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 93 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 1080 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: DFN5

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NTMFS5C646N datasheet

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 ntmfs5c646n.pdf pdf_icon

NTMFS5C646N

MOSFET Power, Single, N-Channel 60 V, 5.0 mW, 93 A NTMFS5C646N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 5.0 mW @ 10 V 93 A Compliant MAXIMUM RATINGS (T

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 ntmfs5c646nlt3g.pdf pdf_icon

NTMFS5C646N

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unles

 0.2. Size:76K  1
 ntmfs5c646nlt1g.pdf pdf_icon

NTMFS5C646N

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unles

 0.3. Size:113K  onsemi
 ntmfs5c646nl.pdf pdf_icon

NTMFS5C646N

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.7 mW @ 10 V 60 V

MOSTRAR MÁS

Otros transistores... NTMFS5C450NL, NTMFS5C456NL, NTMFS5C460NL, NTMFS5C468NL, NTMFS5C609NL, NTMFS5C628N, NTMFS5C628NL, NTMFS5C645NL, 20N60, NTMFS5C670N, NTMFS5C673N, NTMFS5C673NL, NTMFS5C677NL, NTMFS5C682NL, NTMFS5H400NL, NTMFS5H409NL, NTMFS5H414NL