NTMFS5H419NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5H419NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 155 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 675 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm

Encapsulados: DFN5

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NTMFS5H419NL datasheet

 ..1. Size:171K  onsemi
ntmfs5h419nl.pdf pdf_icon

NTMFS5H419NL

NTMFS5H419NL MOSFET Power, Single, N-Channel 40 V, 2.1 mW, 155 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

 5.1. Size:175K  onsemi
ntmfs5h414nl.pdf pdf_icon

NTMFS5H419NL

NTMFS5H414NL MOSFET Single, N-Channel 40 V, 1.4 mW, 210 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 210 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

 6.1. Size:171K  1
ntmfs5h425nlt1g.pdf pdf_icon

NTMFS5H419NL

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

 6.2. Size:171K  onsemi
ntmfs5h425nl.pdf pdf_icon

NTMFS5H419NL

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

Otros transistores... NTMFS5C670N, NTMFS5C673N, NTMFS5C673NL, NTMFS5C677NL, NTMFS5C682NL, NTMFS5H400NL, NTMFS5H409NL, NTMFS5H414NL, IRFB4110, NTMFS5H425NL, NTMFS5H431NL, NTMFS5H600NL, NTMFS5H610NL, NTMFS5H615NL, NTMFS5H630NL, NTMFS6D1N08H, NTMFS6H800N