NTMFS5H419NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS5H419NL
Маркировка: 5H419L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 89 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 155 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 45 nC
Время нарастания (tr): 56 ns
Выходная емкость (Cd): 675 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0021 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5H419NL
NTMFS5H419NL Datasheet (PDF)
ntmfs5h419nl.pdf
NTMFS5H419NLMOSFET Power, Single,N-Channel40 V, 2.1 mW, 155 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.1 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h414nl.pdf
NTMFS5H414NLMOSFET Single,N-Channel40 V, 1.4 mW, 210 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V210 AMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h425nlt1g.pdf
NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h425nl.pdf
NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h431nl.pdf
NTMFS5H431NLMOSFET Power, Single,N-Channel40 V, 3.3 mW, 106 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX3.3 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h400nl.pdf
NTMFS5H400NLMOSFET Power, Single,N-Channel40 V, 0.80 mW, 330 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.80 mW @ 10 V40 V330 AMAXIMUM RATINGS (TJ = 25C unless
ntmfs5h409nl.pdf
NTMFS5H409NLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 270 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.1 mW @ 10 V40 V270 AMAXIMUM RATINGS (TJ = 25C unless ot
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