NTTFS002N04CL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS002N04CL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 142 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 1260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Paquete / Cubierta: WDFN8
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NTTFS002N04CL Datasheet (PDF)
nttfs002n04cl.pdf

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth
nttfs002n04c.pdf

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other
nttfs004n04c.pdf

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis
nttfs005n04c.pdf

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val
Otros transistores... NTP5D0N15MC , NTPF110N65S3HF , NTPF150N65S3HF , NTPF190N65S3HF , NTPF360N80S3Z , NTR3A052PZ , NTR3C21NZ , NTTFS002N04C , 18N50 , NTTFS003N04C , NTTFS004N04C , NTTFS005N04C , NTTFS008N04C , NTTFS010N10MCL , NTTFS015N04C , NTTFS015P03P8Z , NTTFS016N06C .
History: FDBL86363-F085 | MTD6P10ET4 | MTB09P03E3 | IRF7328PBF | STB200NF04-1 | SRT08N025HD | TMP4N60H
History: FDBL86363-F085 | MTD6P10ET4 | MTB09P03E3 | IRF7328PBF | STB200NF04-1 | SRT08N025HD | TMP4N60H



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