Справочник MOSFET. NTTFS002N04CL

 

NTTFS002N04CL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTTFS002N04CL
   Маркировка: 02NL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 142 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 49 nC
   trⓘ - Время нарастания: 77 ns
   Cossⓘ - Выходная емкость: 1260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: WDFN8

 Аналог (замена) для NTTFS002N04CL

 

 

NTTFS002N04CL Datasheet (PDF)

 ..1. Size:355K  onsemi
 nttfs002n04cl.pdf

NTTFS002N04CL NTTFS002N04CL

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth

 2.1. Size:272K  onsemi
 nttfs002n04c.pdf

NTTFS002N04CL NTTFS002N04CL

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other

 7.1. Size:205K  onsemi
 nttfs004n04c.pdf

NTTFS002N04CL NTTFS002N04CL

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis

 7.2. Size:193K  onsemi
 nttfs005n04c.pdf

NTTFS002N04CL NTTFS002N04CL

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val

 7.3. Size:188K  onsemi
 nttfs008n04c.pdf

NTTFS002N04CL NTTFS002N04CL

NTTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(on) MAX ID MAXParameter Symbol Val

 7.4. Size:196K  onsemi
 nttfs003n04c.pdf

NTTFS002N04CL NTTFS002N04CL

NTTFS003N04CMOSFET Power, Single,N-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 3.5 mW @ 10 V 103 AMAXIMUM RATINGS (TJ = 25C unless otherw

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