NTTFS1D2N02P1E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTTFS1D2N02P1EMOSFET - Power, SingleN-Channel, Power3325 V, 1.0 mW, 180 AFeatures Small Footprint for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1.0 mW @ 10 V25 V180 A1.2 mW @ 4.5 V

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsV(BR)DSS RDS(on) MAX ID MAX DC-DC Converters3.6 mW @ 10 V

NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

NTTFS4928NMOSFET Power, Single,N-Channel, m8FL30 V, 37 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS30 V 37 ACompliant13.5 mW @ 4.5 V

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.4 mW @ 10 VApplications30 V 44 A11 mW @ 4.5

NTTFS5116PLMOSFET Power-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchingwww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXApplications52 mW @ -10 V Load Switches-60 V -20 A DC Motor Control72 mW @ -4.5 V DC-DC ConversionP-Channel MOSFETMAXIMUM RATINGS (TJ = 25C unless otherwise stated)D (5-8

NTTFS5C454NLPower MOSFET40 V, 3.8 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C

NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V

NTTFS5C670NLPower MOSFET60 V, 6.5 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwi

NTTFS4932NMOSFET Power, Single,N-Channel, m8FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 V30 V 79 ACompliant5.5 mW @ 4.5 VA

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis

MOSFET - Power,N-Channel, Shielded Gate60 V, 5.2 mW, 78 ANTTFS5D1N06HLGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced MOSFET process that incorporates Shielded Gatetechnology. This process has been optimized to minimize on-stateELECTRICAL CONNECTIONresistance and yet maintain superior switching performance with bestin c

NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S

NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @

NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.

NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS

MOSFET - Power,N-Channel, Shielded Gate80 V, 8.3 mW, 61 ANTTFS8D1N08HGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced MOSFET process that incorporates Shielded Gatetechnology. This process has been optimized to minimize on-stateELECTRICAL CONNECTIONresistance and yet maintain superior switching performance with bestin cl

NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC

NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S

NTTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX5.0 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)60 V

NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S

NTTFS4C06NPower MOSFET30 V, 67 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant4.2 mW @ 10 VApplications30 V 67 A6.1 mW @

NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V

NTTFS015P03P8ZMOSFET Power, Single,P-Channel, m8FL-30 V, 7.5 mW Featureswww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving andExcellent Thermal ConductionV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 mW @ -10 VCompliant-30 V -47.6 A12 mW @ -4.5 V

MOSFET - Power,N-Channel, Shielded Gate40 V, 2.75 mW, 104 ANTTFS2D8N04HLGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced MOSFET process that incorporates Shielded Gatetechnology. This process has been optimized to minimize on-stateELECTRICAL CONNECTIONresistance and yet maintain superior switching performance with bestin

NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @

NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val

MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANTTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX14 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANTTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 16.3 mW @ 10 V 32 ATypica

NTTFS5C454NLPower MOSFET40 V, 3.8 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C

NTTFS6H850NMOSFET Power, Single,N-Channel80 V, 9.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX80 V 9.5 mW @ 10 V 68 AMAXIMUM RATINGS (TJ = 25C unless otherwise

MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANTTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V40 V 41 A15.5 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25

NTTFS4H05NPower MOSFET25 V, 94 A, Single N-Channel, m8-FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsVGS MAX RDS(on) TYP QGTOT Hi

NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S

NTTFS4937NMOSFET Power, Single,N-Channel, m8FL30 V, 75 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.5 mW @ 10 V30 V 75 ACompliant7.0 mW @ 4.5 VA

NTTFS4C02NMOSFET Power, Single,N-Channel, m8FL30 V, 170 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.25 mW @ 10 V30 V 170 AApplications3.1

NTTFS4939NMOSFET Power, Single,N-Channel, m8FL30 V, 52 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 V30 V 52 ACompliant8.0 mW @ 4.5 VA

NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @

MOSFET - Power, SingleN-Channel, m8FL60 V, 29.7 mW, 19 ANTTFS030N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 29.7 mW @ 10 V 19 ATypica

NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANTTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant20 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V

NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S

NTTFS5116PLPower MOSFET-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchinghttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantApplications V(BR)DSS RDS(on) MAX ID MAX Load Switches52 mW @ -10 V DC Motor Control -60 V -20 A72 mW @ -4.5 V DC-DC ConversionMAXIMUM RATINGS (TJ = 25C unless otherwise stated)P-Channel MOSFETParameter

NTTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(on) MAX ID MAXParameter Symbol Val

NTTFS4943NPower MOSFET30 V, 41 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications7.2 mW @ 10 V30 V 41 A DC-DC

NTTFS5811NLPower MOSFET40 V, 53 A, 6.4 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.7 mW @ 10 V40 V 53 A10 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 40

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.

NTTFS5CS70NLPower MOSFET60 V, 6.5 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwi

NTTFS003N04CMOSFET Power, Single,N-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 3.5 mW @ 10 V 103 AMAXIMUM RATINGS (TJ = 25C unless otherw

NTTFS015N04CMOSFET Power, Single,N-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 17.3 mW @ 10 V 27 AMAXIMUM RATINGS (TJ = 25C unless otherw

NTTFS5C680NLMOSFET - Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX26.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 6

NTTFS4H07NPower MOSFET25 V, 66 A, Single N-Channel, m8-FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications Hi

NTTFS5C673NLPower MOSFET60 V, 9.3 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX9.3 mW @ 10 VMAXIMUM RATINGS (TJ = 25C u

NTTFS5820NLPower MOSFET60 V, 37 A, 11.5 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant11.5 mW @ 10 V60 V 37 A15 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS

NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V

MOSFET Power, Single,N-Channel40 V, 7.3 mW, 51 ANTTFS5C466NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant7.3 mW @ 10 V40 V 51 AMAXIMUM RATINGS (TJ = 25C unless otherw

NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC

NTTFS4945NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 34 A Power

NTTFS5C460NLMOSFET Power, Single,N-Channel40 V, 4.8 mW, 74 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.8 mW @ 10 V40 V 74 AMAXIMUM RATINGS (TJ = 25C unless otherw

NTTFS4C13NPower MOSFET30 V, 38 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications9.4 mW @ 10 V CPU Power Delive

NTTFS4840NPower MOSFET30 V, 26 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications24 mW @ 10 V DC-DC Converters

NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @

NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S

NTTFS5811NLPower MOSFET40 V, 53 A, 6.4 mWFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.7 mW @ 10 V40 V 53 A10 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 40

MOSFET - Power, SingleN-Channel, m8FL60 V, 22.6 mW, 24 ANTTFS024N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 22.6 mW @ 10 V 24 ATypica

NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S

NTTFS3A08PZPower MOSFET-20 V, -15 A, Single P-Channel, m8FLFeatures Ultra Low RDS(on) to Minimize Conduction Losses m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent ThermalConductionhttp://onsemi.com ESD Protection Level of 5 kV per JESD22-A114 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant6.7 mW @ -4.5

NTTFS5116PLPower MOSFET-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchinghttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantApplications V(BR)DSS RDS(on) MAX ID MAX Load Switches52 mW @ -10 V DC Motor Control -60 V -20 A72 mW @ -4.5 V DC-DC ConversionMAXIMUM RATINGS (TJ = 25C unless otherwise stated)P-Channel MOSFETParameter

NTTFS4985NFPower MOSFET30 V, 64 A, Single N-Channel, WDFN8Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.5 mW @ 10 V30 V 64 AApplications

NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @

NTTFS5116PLMOSFET Power-60 V, -20 A, 52 mWFeatures Low RDS(on) Fast Switchingwww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXApplications52 mW @ -10 V Load Switches-60 V -20 A DC Motor Control72 mW @ -4.5 V DC-DC ConversionP-Channel MOSFETMAXIMUM RATINGS (TJ = 25C unless otherwise stated)D (5-8

NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications7.4 mW @ 10 V DC-DC Converters

NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant29 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications3.6 mW @ 10 V DC-DC Converters

NTTFS5826NLPower MOSFET60 V, 24 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications Motor Drivers24 mW @ 10 V60 V 20 A DC-DC Converters32 mW @ 4.5 V

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth

MOSFET - Power, SingleN-Channel, m8FL60 V, 20.3 mW, 27 ANTTFS020N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 20.3 mW @ 10 V 27 ATypica

NTTFS5C453NLPower MOSFET40 V, 3 mW, 107 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unle

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANTTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)13.4 mW @ 10 V

NTTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)8.6 mW @ 10 VParam

NTTFS010N10MCLMOSFET, N-Channel,Shielded Gate,POWERTRENCH)100 V, 50 A, 10.6 mWwww.onsemi.comGeneral DescriptionThis N-Channel POWETRENCH MOSFET is produced usingELECTRICAL CONNECTIONON Semiconductors advanced POWERTRENCH process thatincorporates Shielded Gate technology. This process has beenSDoptimized to minimize on-state resistance and yet maintain superior

NTTFS4H05NMOSFET Power, Single,N-Channel, m8-FL25 V, 94 AFeatures Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOTCompliant4.5 V 4.8 mW 8.7

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other

NTTFS4800NPower MOSFET30 V, 32 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications20 mW @ 10 V DC-DC Converters