NTTFS1D2N02P1E - описание и поиск аналогов

 ..1. Size:540K  onsemi
 nttfs1d2n02p1e.pdf 

NTTFS1D2N02P1E MOSFET - Power, Single N-Channel, Power33 25 V, 1.0 mW, 180 A Features Small Footprint for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1.0 mW @ 10 V 25 V 180 A 1.2 mW @ 4.5 V

 9.1. Size:121K  1
 nttfs4c05ntag.pdf 

 9.2. Size:107K  1
 nttfs5820nltag.pdf 

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 9.3. Size:119K  1
 nttfs4c25ntag.pdf 

NTTFS4C25N Power MOSFET 30 V, 27 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 17 mW @ 10 V DC-DC Converters

 9.4. Size:128K  1
 nttfs4928ntag.pdf 

NTTFS4928N MOSFET Power, Single, N-Channel, m8FL 30 V, 37 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses 9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 30 V 37 A Compliant 13.5 mW @ 4.5 V

 9.5. Size:118K  1
 nttfs4c10ntag.pdf 

NTTFS4C10N Power MOSFET 30 V, 44 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.4 mW @ 10 V Applications 30 V 44 A 11 mW @ 4.5

 9.6. Size:124K  1
 nttfs5116pltag.pdf 

NTTFS5116PL MOSFET Power -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 52 mW @ -10 V Load Switches -60 V -20 A DC Motor Control 72 mW @ -4.5 V DC-DC Conversion P-Channel MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8

 9.7. Size:76K  1
 nttfs5c454nltag.pdf 

NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C

 9.8. Size:108K  1
 nttfs5826nltag.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 9.9. Size:147K  onsemi
 nttfs5c670nl.pdf 

NTTFS5C670NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi

 9.10. Size:195K  onsemi
 nttfs4932n.pdf 

NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A

 9.11. Size:205K  onsemi
 nttfs004n04c.pdf 

NTTFS004N04C MOSFET Power, Single, N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 4.9 mW @ 10 V 77 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

 9.12. Size:298K  onsemi
 nttfs5d1n06hl.pdf 

MOSFET - Power, N-Channel, Shielded Gate 60 V, 5.2 mW, 78 A NTTFS5D1N06HL General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state ELECTRICAL CONNECTION resistance and yet maintain superior switching performance with best in c

 9.13. Size:113K  onsemi
 nttfs4932ntag.pdf 

NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S

 9.14. Size:106K  onsemi
 nttfs4823ntag.pdf 

NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @

 9.15. Size:116K  onsemi
 nttfs4929ntag.pdf 

NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.

 9.16. Size:107K  onsemi
 nttfs5820nltag.pdf 

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 9.17. Size:299K  onsemi
 nttfs8d1n08h.pdf 

MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.3 mW, 61 A NTTFS8D1N08H General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state ELECTRICAL CONNECTION resistance and yet maintain superior switching performance with best in cl

 9.18. Size:127K  onsemi
 nttfs4930n.pdf 

NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC

 9.19. Size:111K  onsemi
 nttfs4939n-d.pdf 

NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S

 9.20. Size:139K  onsemi
 nttfs5c658nl.pdf 

NTTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 5.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V

 9.21. Size:111K  onsemi
 nttfs4941n.pdf 

NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S

 9.22. Size:119K  onsemi
 nttfs4c06n.pdf 

NTTFS4C06N Power MOSFET 30 V, 67 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 4.2 mW @ 10 V Applications 30 V 67 A 6.1 mW @

 9.23. Size:108K  onsemi
 nttfs5826nl.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 9.24. Size:201K  onsemi
 nttfs015p03p8z.pdf 

NTTFS015P03P8Z MOSFET Power, Single, P-Channel, m8FL -30 V, 7.5 mW Features www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.5 mW @ -10 V Compliant -30 V -47.6 A 12 mW @ -4.5 V

 9.25. Size:295K  onsemi
 nttfs2d8n04hl.pdf 

MOSFET - Power, N-Channel, Shielded Gate 40 V, 2.75 mW, 104 A NTTFS2D8N04HL General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state ELECTRICAL CONNECTION resistance and yet maintain superior switching performance with best in

 9.26. Size:122K  onsemi
 nttfs4928n.pdf 

NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @

 9.27. Size:105K  onsemi
 nttfs4824n.pdf 

NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4

 9.28. Size:193K  onsemi
 nttfs005n04c.pdf 

NTTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Val

 9.29. Size:199K  onsemi
 nttfs5c478nl.pdf 

MOSFET Power, Single N-Channel 40 V, 14 mW, 26 A NTTFS5C478NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 14 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40

 9.30. Size:139K  onsemi
 nttfs016n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NTTFS016N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 16.3 mW @ 10 V 32 A Typica

 9.31. Size:76K  onsemi
 nttfs5c454nl.pdf 

NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C

 9.32. Size:196K  onsemi
 nttfs6h850n.pdf 

NTTFS6H850N MOSFET Power, Single, N-Channel 80 V, 9.5 mW, 68 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 80 V 9.5 mW @ 10 V 68 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

 9.33. Size:269K  onsemi
 nttfs5c471nl.pdf 

 9.34. Size:82K  onsemi
 nttfs4h05n nttfs4h05ntag.pdf 

NTTFS4H05N Power MOSFET 25 V, 94 A, Single N-Channel, m8-FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications VGS MAX RDS(on) TYP QGTOT Hi

 9.35. Size:112K  onsemi
 nttfs4941ntag.pdf 

NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S

 9.36. Size:194K  onsemi
 nttfs4937n.pdf 

NTTFS4937N MOSFET Power, Single, N-Channel, m8FL 30 V, 75 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.5 mW @ 10 V 30 V 75 A Compliant 7.0 mW @ 4.5 V A

 9.37. Size:206K  onsemi
 nttfs4c02n.pdf 

NTTFS4C02N MOSFET Power, Single, N-Channel, m8FL 30 V, 170 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.25 mW @ 10 V 30 V 170 A Applications 3.1

 9.38. Size:193K  onsemi
 nttfs4939n.pdf 

NTTFS4939N MOSFET Power, Single, N-Channel, m8FL 30 V, 52 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V 30 V 52 A Compliant 8.0 mW @ 4.5 V A

 9.39. Size:111K  onsemi
 nttfs4928ntag.pdf 

NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @

 9.40. Size:199K  onsemi
 nttfs030n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 29.7 mW, 19 A NTTFS030N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 29.7 mW @ 10 V 19 A Typica

 9.41. Size:106K  onsemi
 nttfs4824ntag.pdf 

NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4

 9.42. Size:197K  onsemi
 nttfs6h860nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NTTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 20 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V

 9.43. Size:111K  onsemi
 nttfs4939ntag.pdf 

NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S

 9.44. Size:111K  onsemi
 nttfs5116pl-d.pdf 

NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching http //onsemi.com These Devices are Pb-Free and are RoHS Compliant Applications V(BR)DSS RDS(on) MAX ID MAX Load Switches 52 mW @ -10 V DC Motor Control -60 V -20 A 72 mW @ -4.5 V DC-DC Conversion MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) P-Channel MOSFET Parameter

 9.45. Size:188K  onsemi
 nttfs008n04c.pdf 

NTTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(on) MAX ID MAX Parameter Symbol Val

 9.46. Size:111K  onsemi
 nttfs4943n-d.pdf 

NTTFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 7.2 mW @ 10 V 30 V 41 A DC-DC

 9.47. Size:111K  onsemi
 nttfs5811nl.pdf 

NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.7 mW @ 10 V 40 V 53 A 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 40

 9.48. Size:115K  onsemi
 nttfs4c25n.pdf 

NTTFS4C25N Power MOSFET 30 V, 27 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 17 mW @ 10 V DC-DC Converters

 9.49. Size:127K  onsemi
 nttfs4929n.pdf 

NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.

 9.50. Size:100K  onsemi
 nttfs5cs70nl.pdf 

NTTFS5CS70NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi

 9.51. Size:781K  onsemi
 nttfs3a08pz.pdf 

 9.52. Size:196K  onsemi
 nttfs003n04c.pdf 

NTTFS003N04C MOSFET Power, Single, N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 3.5 mW @ 10 V 103 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 9.53. Size:199K  onsemi
 nttfs015n04c.pdf 

NTTFS015N04C MOSFET Power, Single, N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 17.3 mW @ 10 V 27 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 9.54. Size:143K  onsemi
 nttfs5c680nl.pdf 

NTTFS5C680NL MOSFET - Power, Single N-Channel 60 V, 26.5 mW, 20 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 26.5 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6

 9.55. Size:80K  onsemi
 nttfs4h07n.pdf 

NTTFS4H07N Power MOSFET 25 V, 66 A, Single N-Channel, m8-FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications Hi

 9.56. Size:144K  onsemi
 nttfs5c673nl.pdf 

NTTFS5C673NL Power MOSFET 60 V, 9.3 mW, 50 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 9.3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C u

 9.57. Size:110K  onsemi
 nttfs5820nl.pdf 

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 9.58. Size:111K  onsemi
 nttfs5826nl-d.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 9.59. Size:118K  onsemi
 nttfs5c466nl.pdf 

MOSFET Power, Single, N-Channel 40 V, 7.3 mW, 51 A NTTFS5C466NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 7.3 mW @ 10 V 40 V 51 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 9.60. Size:116K  onsemi
 nttfs4930ntag.pdf 

NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC

 9.61. Size:109K  onsemi
 nttfs4945n.pdf 

NTTFS4945N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 34 A Power

 9.62. Size:200K  onsemi
 nttfs5c460nl.pdf 

NTTFS5C460NL MOSFET Power, Single, N-Channel 40 V, 4.8 mW, 74 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.8 mW @ 10 V 40 V 74 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 9.63. Size:78K  onsemi
 nttfs4c13n.pdf 

NTTFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.4 mW @ 10 V CPU Power Delive

 9.64. Size:111K  onsemi
 nttfs4840n.pdf 

NTTFS4840N Power MOSFET 30 V, 26 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 24 mW @ 10 V DC-DC Converters

 9.65. Size:106K  onsemi
 nttfs4821ntag.pdf 

NTTFS4821N Power MOSFET 30 V, 57 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.0 mW @ 10 V 30 V 57 A Applications 10.8 mW @

 9.66. Size:112K  onsemi
 nttfs4932n-d.pdf 

NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S

 9.67. Size:107K  onsemi
 nttfs5811nltag.pdf 

NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.7 mW @ 10 V 40 V 53 A 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 40

 9.68. Size:141K  onsemi
 nttfs024n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NTTFS024N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 22.6 mW @ 10 V 24 A Typica

 9.69. Size:111K  onsemi
 nttfs4937n-d.pdf 

NTTFS4937N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.5 mW @ 10 V 30 V 75 A Low-S

 9.70. Size:117K  onsemi
 nttfs3a08pz nttfs3a08pztag.pdf 

NTTFS3A08PZ Power MOSFET -20 V, -15 A, Single P-Channel, m8FL Features Ultra Low RDS(on) to Minimize Conduction Losses m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction http //onsemi.com ESD Protection Level of 5 kV per JESD22-A114 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 6.7 mW @ -4.5

 9.71. Size:107K  onsemi
 nttfs5116pltag.pdf 

NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching http //onsemi.com These Devices are Pb-Free and are RoHS Compliant Applications V(BR)DSS RDS(on) MAX ID MAX Load Switches 52 mW @ -10 V DC Motor Control -60 V -20 A 72 mW @ -4.5 V DC-DC Conversion MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) P-Channel MOSFET Parameter

 9.72. Size:116K  onsemi
 nttfs4985nf.pdf 

NTTFS4985NF Power MOSFET 30 V, 64 A, Single N-Channel, WDFN8 Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.5 mW @ 10 V 30 V 64 A Applications

 9.73. Size:105K  onsemi
 nttfs4821n.pdf 

NTTFS4821N Power MOSFET 30 V, 57 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.0 mW @ 10 V 30 V 57 A Applications 10.8 mW @

 9.74. Size:124K  onsemi
 nttfs5116pl.pdf 

NTTFS5116PL MOSFET Power -60 V, -20 A, 52 mW Features Low RDS(on) Fast Switching www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 52 mW @ -10 V Load Switches -60 V -20 A DC Motor Control 72 mW @ -4.5 V DC-DC Conversion P-Channel MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8

 9.75. Size:105K  onsemi
 nttfs4823n.pdf 

NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @

 9.76. Size:109K  onsemi
 nttfs4c10n.pdf 

NTTFS4C10N Power MOSFET 30 V, 44 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 7.4 mW @ 10 V DC-DC Converters

 9.77. Size:112K  onsemi
 nttfs4937ntag.pdf 

NTTFS4937N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.5 mW @ 10 V 30 V 75 A Low-S

 9.78. Size:197K  onsemi
 nttfs6h880nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NTTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 29 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

 9.79. Size:112K  onsemi
 nttfs4c05n.pdf 

NTTFS4C05N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 3.6 mW @ 10 V DC-DC Converters

 9.80. Size:108K  onsemi
 nttfs5826nltag.pdf 

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

 9.81. Size:355K  onsemi
 nttfs002n04cl.pdf 

NTTFS002N04CL MOSFET Power, Single, N-Channel 40 V, 2.2 mW, 142 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 2.2 mW @ 10 V 40 V 142 A MAXIMUM RATINGS (TJ = 25 C unless oth

 9.82. Size:198K  onsemi
 nttfs020n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 20.3 mW, 27 A NTTFS020N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 20.3 mW @ 10 V 27 A Typica

 9.83. Size:144K  onsemi
 nttfs5c453nl.pdf 

NTTFS5C453NL Power MOSFET 40 V, 3 mW, 107 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unle

 9.84. Size:201K  onsemi
 nttfs6h854nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NTTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 13.4 mW @ 10 V

 9.85. Size:185K  onsemi
 nttfs6h850nl.pdf 

NTTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 8.6 mW @ 10 V Param

 9.86. Size:387K  onsemi
 nttfs010n10mcl.pdf 

NTTFS010N10MCL MOSFET, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 50 A, 10.6 mW www.onsemi.com General Description This N-Channel POWETRENCH MOSFET is produced using ELECTRICAL CONNECTION ON Semiconductor s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been S D optimized to minimize on-state resistance and yet maintain superior

 9.87. Size:204K  onsemi
 nttfs4h05n.pdf 

NTTFS4H05N MOSFET Power, Single, N-Channel, m8-FL 25 V, 94 A Features Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VGS MAX RDS(on) TYP QGTOT Compliant 4.5 V 4.8 mW 8.7

 9.88. Size:272K  onsemi
 nttfs002n04c.pdf 

NTTFS002N04C MOSFET Power, Single, N-Channel 40 V, 2.4 mW, 136 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 2.4 mW @ 10 V 136 A MAXIMUM RATINGS (TJ = 25 C unless other

 9.89. Size:111K  onsemi
 nttfs4800n-d.pdf 

NTTFS4800N Power MOSFET 30 V, 32 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 20 mW @ 10 V DC-DC Converters