NTTFS5C658NL Todos los transistores

 

NTTFS5C658NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTTFS5C658NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 109 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 96 nS
   Cossⓘ - Capacitancia de salida: 890 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: WDFN8
 

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Principales características: NTTFS5C658NL

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NTTFS5C658NL

NTTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 5.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V

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NTTFS5C658NL

NTTFS5C670NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwi

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NTTFS5C658NL

NTTFS5C680NL MOSFET - Power, Single N-Channel 60 V, 26.5 mW, 20 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 26.5 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6

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NTTFS5C658NL

NTTFS5C673NL Power MOSFET 60 V, 9.3 mW, 50 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 9.3 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C u

MOSTRAR MÁS

Otros transistores... NTTFS2D8N04HL , NTTFS4C02N , NTTFS5C453NL , NTTFS5C454NL , NTTFS5C460NL , NTTFS5C466NL , NTTFS5C471NL , NTTFS5C478NL , IRFB31N20D , NTTFS5C670NL , NTTFS5C673NL , NTTFS5C680NL , NTTFS5CS70NL , NTTFS5D1N06HL , NTTFS6H850N , NTTFS6H850NL , NTTFS6H854NL .

History: 2P986EC

 

 
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