NTTFS6H854NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTTFS6H854NL
   Código: 854L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 118 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0134 Ohm
   Paquete / Cubierta: WDFN8

Búsqueda de reemplazo de MOSFET NTTFS6H854NL

NTTFS6H854NL Datasheet (PDF)

..1. Size:201K onsemi
nttfs6h854nl.pdf

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANTTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)13.4 mW @ 10 V

5.1. Size:196K onsemi
nttfs6h850n.pdf

NTTFS6H850NMOSFET Power, Single,N-Channel80 V, 9.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX80 V 9.5 mW @ 10 V 68 AMAXIMUM RATINGS (TJ = 25C unless otherwise

5.2. Size:185K onsemi
nttfs6h850nl.pdf

NTTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)8.6 mW @ 10 VParam

6.1. Size:197K onsemi
nttfs6h860nl.pdf

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANTTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant20 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V

6.2. Size:197K onsemi
nttfs6h880nl.pdf

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant29 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: