NTUD3174NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTUD3174NZ
   Código: 6*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 25.5 nS
   Cossⓘ - Capacitancia de salida: 3.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SOT963

Búsqueda de reemplazo de MOSFET NTUD3174NZ

NTUD3174NZ Datasheet (PDF)

..1. Size:109K onsemi
ntud3174nz.pdf

NTUD3174NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V20 V 0.22 A Ultra Thin Profile (

7.1. Size:101K onsemi
ntud3170nz.pdf

NTUD3170NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.22 A2.0 W @ 2.5 V Ultra Thin Profile (

7.2. Size:103K onsemi
ntud3171pz.pdf

NTUD3171PZSmall Signal MOSFET-20 V, -200 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5 V Gate Voltage Rating6.0 W @ -2.5 V Ultra Thin Profile (

8.1. Size:114K onsemi
ntud3127c-d.pdf

NTUD3127CSmall Signal MOSFET20 V, 200 mA / -180 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device 1.5 V Gate Voltage RatingV(BR)DSS RDS(on) Max ID Max Ultra Thin Profile (

8.2. Size:81K onsemi
ntud3128n.pdf

NTUD3128NSmall Signal MOSFET20 V, 200 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.0 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.2 A4.0 W @ 2.5 V Ultra Thin Profile (

8.3. Size:81K onsemi
ntud3129p.pdf

NTUD3129PSmall Signal MOSFET-20 V, -180 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5V Gate Voltage Rating7.0 W @ -2.5 V-20 V -0.18 A Ultra Thin Profile (

8.4. Size:118K onsemi
ntud3169cz.pdf

NTUD3169CZSmall Signal MOSFET20 V, 220 mA / -200 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mmV(BR)DSS RDS(on) Max ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V Ultra Thin Profile (

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History: NTTFS4H05NTAG | NTD4804N

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