NTUD3174NZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTUD3174NZ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.22 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 25.5 ns
Cossⓘ - Выходная емкость: 3.6 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: SOT963
Аналог (замена) для NTUD3174NZ
NTUD3174NZ Datasheet (PDF)
ntud3174nz.pdf
NTUD3174NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V20 V 0.22 A Ultra Thin Profile (
ntud3170nz.pdf
NTUD3170NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.22 A2.0 W @ 2.5 V Ultra Thin Profile (
ntud3171pz.pdf
NTUD3171PZSmall Signal MOSFET-20 V, -200 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5 V Gate Voltage Rating6.0 W @ -2.5 V Ultra Thin Profile (
ntud3127c-d.pdf
NTUD3127CSmall Signal MOSFET20 V, 200 mA / -180 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device 1.5 V Gate Voltage RatingV(BR)DSS RDS(on) Max ID Max Ultra Thin Profile (
ntud3128n.pdf
NTUD3128NSmall Signal MOSFET20 V, 200 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.0 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.2 A4.0 W @ 2.5 V Ultra Thin Profile (
ntud3129p.pdf
NTUD3129PSmall Signal MOSFET-20 V, -180 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5V Gate Voltage Rating7.0 W @ -2.5 V-20 V -0.18 A Ultra Thin Profile (
ntud3169cz.pdf
NTUD3169CZSmall Signal MOSFET20 V, 220 mA / -200 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mmV(BR)DSS RDS(on) Max ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V Ultra Thin Profile (
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
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