NVATS5A106PLZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVATS5A106PLZ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: ATPAK

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NVATS5A106PLZ datasheet

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NVATS5A106PLZ

NVATS5A106PLZ Power MOSFET 40 V, 25 m , 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V

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NVATS5A106PLZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

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NVATS5A106PLZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V

 6.2. Size:823K  onsemi
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NVATS5A106PLZ

MOSTRAR MÁS

Otros transistores... NTTFS6H850NL, NTTFS6H854NL, NTTFS6H860NL, NTTFS6H880NL, NTTFS8D1N08H, NTUD3174NZ, NTZD3158P, NVATS4A103PZ, 75N75, PM2301, PM2302, PM3400, PM3401, KS2302AA, SI12N60-F, SI12N60, SI20N03