NVATS5A106PLZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVATS5A106PLZ

Código: ATP106

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente |Vds|: 40 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 33 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.6 V

Carga de compuerta (Qg): 29 nC

Tiempo de elevación (tr): 120 nS

Conductancia de drenaje-sustrato (Cd): 210 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: ATPAK

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NVATS5A106PLZ Datasheet (PDF)

0.1. nvats5a106plz.pdf Size:781K _onsemi

NVATS5A106PLZ Power MOSFET 40 V, 25 m, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V

5.1. nvats5a107plz.pdf Size:805K _onsemi

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

6.1. nvats5a113plz.pdf Size:823K _onsemi

NVATS5A113PLZ Power MOSFET 60 V, 29.5 m, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features Low On-Resistance 29.5 m @ 10 V High Current Capability

6.2. nvats5a114plz.pdf Size:941K _onsemi

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V

6.3. nvats5a112plz.pdf Size:859K _onsemi

NVATS5A112PLZ Power MOSFET 60 V, 43 m, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive www.onsemi.com applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 43 m @ 10 V 60

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