NVATS5A106PLZ Specs and Replacement
Type Designator: NVATS5A106PLZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: ATPAK
NVATS5A106PLZ substitution
NVATS5A106PLZ Specs
nvats5a106plz.pdf
NVATS5A106PLZ Power MOSFET 40 V, 25 m , 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V ... See More ⇒
nvats5a107plz.pdf
NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40... See More ⇒
nvats5a114plz.pdf
NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V... See More ⇒
Detailed specifications: NTTFS6H850NL , NTTFS6H854NL , NTTFS6H860NL , NTTFS6H880NL , NTTFS8D1N08H , NTUD3174NZ , NTZD3158P , NVATS4A103PZ , AOD4184A , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 , SI20N03 .
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