PM3400 Todos los transistores

 ..1. Size:336K  pn silicon
 pm3400.pdf

PM3400 30V N-Channel MOSFET Description Applications The PM3400 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON) This device is suitable for use in PWM, load switching Battery Switch and general purpose applications. Marking Information Features Trench Power MOSFET

 0.1. Size:876K  lowpower
 lpm3400b3f.pdf

Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m (max.)@VGS=4.5V DS(ON) provide excellent R , low gate charge and 20V/4A, R 52m (max.)@VGS=2.5V DS(ON) DS(ON) operation with gate voltages as low as 1.1V. This Super high density cell design for

 9.1. Size:2014K  willsemi
 wpm3401.pdf

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m ) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

 9.2. Size:1489K  willsemi
 wpm3407.pdf

WPM3407 WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Http //www.sh-willsemi.com Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product 3 WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V 53 m @ -4.5

 9.3. Size:439K  tysemi
 wpm3401.pdf

Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

 9.4. Size:689K  tysemi
 wpm3407.pdf

Product specification WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for 3 use in DC-DC conversion applications. Standard Product WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V pin connections 53 m

 9.5. Size:375K  lowpower
 lpm3401.pdf

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON) 58m (typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON) 68m (typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

 9.6. Size:228K  lowpower
 lpm3406b3f.pdf

Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m (Typ.)@VGS=4.5V DS(ON) power field effect transistor, which are produced by 30V/3.6A, R =36m (Typ.)@VGS=10V DS(ON) using high cell density, DMOS trench technology. Super high density cell d

 9.7. Size:283K  cn haohai electr
 hpm3401.pdf

HPM3401 P-Channel MOSFETs -3.8A,-30V P P HPM3401 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -3.8A, RDS(ON)=50m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead f

 9.8. Size:282K  cn haohai electr
 hpm3401a.pdf

HPM3401A P-Channel MOSFETs -4.2A,-30V P P HPM3401A P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -4.2A, RDS(ON)=53m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Le

 9.9. Size:354K  pn silicon
 pm3401.pdf

PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON) This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON