PM3400 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PM3400
Маркировка: 3400
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7(max) ns
Cossⓘ - Выходная емкость: 99 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: SOT23
PM3400 Datasheet (PDF)
pm3400.pdf
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PM3400 30V N-Channel MOSFET Description Applications The PM3400 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching Battery Switch and general purpose applications. Marking Information Features Trench Power MOSFET
lpm3400b3f.pdf
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Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m(max.)@VGS=4.5V DS(ON)provide excellent R , low gate charge and 20V/4A, R 52m(max.)@VGS=2.5V DS(ON) DS(ON)operation with gate voltages as low as 1.1V. This Super high density cell design for
wpm3401.pdf
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WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz
wpm3407.pdf
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WPM3407WPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETHttp://www.sh-willsemi.com DescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable foruse in DC-DC conversion applications. Standard Product3WPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V53 m @ -4.5
wpm3401.pdf
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Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co
wpm3407.pdf
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Product specificationWPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETDescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable for3use in DC-DC conversion applications. Standard ProductWPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V pin connections : 53 m
lpm3401.pdf
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Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi
lpm3406b3f.pdf
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Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m(Typ.)@VGS=4.5V DS(ON)power field effect transistor, which are produced by 30V/3.6A, R =36m(Typ.)@VGS=10V DS(ON)using high cell density, DMOS trench technology. Super high density cell d
hpm3401.pdf
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HPM3401P-Channel MOSFETs-3.8A,-30VP PHPM3401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -3.8A, RDS(ON)=50m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLead f
hpm3401a.pdf
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HPM3401AP-Channel MOSFETs-4.2A,-30VPP HPM3401AP-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -4.2A, RDS(ON)=53m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLe
pm3401.pdf
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PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![PM3400](https://alltransistors.com/images/us.png)
![PM3400](https://alltransistors.com/images/es.png)
![PM3400](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: FIR9N90FG | FIR9N65LG | FIR9N50FG | FIR96N08PG | FIR8N80FG | FIR8N70FG | FIR8N65FG | FIR8N60FG | FIR80N10LG | FIR80N08PG | FIR80N03LG | FIR7NS70ALG | FIR7NS70AFG | FIR7NS65AFG | FIR6N90FG | FIR6N70FG