SI3400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI3400
Código: A01TF*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 9.7 nC
Tiempo de subida (tr): 4.8 nS
Conductancia de drenaje-sustrato (Cd): 99 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SI3400
SI3400 Datasheet (PDF)
si3400.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI3400N-Channel 30-V(D-S) MOSFETSI3400V(BR)DSS RDS(on)MAX IDSOT-23 SOT-23-3L/0.028@ 10V31.GATE30V5.8A0.033@ 4.5V2.SOURCE3.DRAIN10.052@ 2.5V2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageA01TF wAPPLICATION*wweek codeLoad Sw
si3400a.pdf
M C CRMicro Commercial Components Micro Commercial Components20736 Marilla Street ChatsworthCA 91311SI3400APhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"N-Channel Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Enhancement Mode High dense cell design for extremely low
si3407dv.pdf
Si3407DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET- 20 21 nC PWM Optimized0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9
si3403dv.pdf
Si3403DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.07 at VGS = - 4.5 V - 5- 20 4.5 nC PWM Optimized, Low Qgd/Qgs Ratio0.105 at VGS = - 2.5 V - 4.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switc
si3404.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3404Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R4 Epoxy mee
si3402.pdf
SI3402Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C
si3407.pdf
SI3407Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -5
si3404.pdf
SI3404Features High Density Cell Design for Extremely Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating
si3406.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI3406N-Channel 30-V(D-S) MOSFETSI3406V(BR)DSS RDS(on)MAX IDSOT-230.065@ 10V330V3.6 A1.GATE0.105@ 4.5 V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitLead free product is acquiredMARKINGSurface mount packageA69TF wAPPLICATIONLoad Switch for Portable DevicesDC/DC Conver
si3402.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI3402N-Channel 30-V(D-S) MOSFETSI 3402V(BR)DSS RDS(on)MAX IDSOT-230.070@ 10V31.GATE30V4.0A0.075@ 4.5V2.SOURCE3.DRAIN10.105 @ 2.5V2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageA22TF wAPPLICATIONLoad Switch for Portable Devices
si3401.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI3401P-Channel 30-V(D-S) MOSFETSI3401V(BR)DSS RDS(on)MAX IDSOT-230.060@-10V3-30V 0.070@-4.5V 1.GATE-4.0A2.SOURCE0.100@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA11TF wAPPLICATION*wweek codeLoad Switch for Porta
si3404.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI3404SI3404 N-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.025@ 10V330V 5.8A1.GATE0.035@ 4.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredEquivalent CircuitMARKINGSurface mount packageA46TF wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter
si3403.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI 3403P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY SOT-23VDS (V) rDS(on) ()ID (A)0.130 at VGS = - 10 V - 2.6- 3030.200 at VGS = - 4.5 V - 2.01.GATE2.SOURCE3.DRAINGeneral FEATURE 12TrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageAPPLICATIONA96TF wLoad Switch
si3407dv-t1.pdf
Si3407DV-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP
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