SI3400 Specs and Replacement

Type Designator: SI3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT23

SI3400 substitution

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SI3400 datasheet

 ..1. Size:3660K  cn szxunrui
si3400.pdf pdf_icon

SI3400

SOT-23 Plastic-Encapsulate MOSFETS SI3400 N-Channel 30-V(D-S) MOSFET SI3400 V(BR)DSS RDS(on)MAX ID SOT-23 SOT-23-3L / 0.028 @ 10V 3 1.GATE 30V 5.8A 0.033 @ 4.5V 2.SOURCE 3.DRAIN 1 0.052 @ 2.5V 2 General FEATURE Equivalent Circuit MARKING TrenchFET Power MOSFET Lead free product is acquired Surface mount package A01TF w APPLICATION *w week code Load Sw... See More ⇒

 0.1. Size:497K  mcc
si3400a.pdf pdf_icon

SI3400

M C C R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 SI3400A Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" N-Channel Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Enhancement Mode High dense cell design for extremely low... See More ⇒

 9.1. Size:192K  vishay
si3407dv.pdf pdf_icon

SI3400

Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET - 20 21 nC PWM Optimized 0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9... See More ⇒

 9.2. Size:98K  vishay
si3403dv.pdf pdf_icon

SI3400

Si3403DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.07 at VGS = - 4.5 V - 5 - 20 4.5 nC PWM Optimized, Low Qgd/Qgs Ratio 0.105 at VGS = - 2.5 V - 4.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switc... See More ⇒

Detailed specifications: PM2302, PM3400, PM3401, KS2302AA, SI12N60-F, SI12N60, SI20N03, SI25N10, 20N60, SI3401, SI3403, SI3406, SI4260, SI4430, SI4614, SI4953, SI4N60-TA3-T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.