SI9435 Todos los transistores

 ..1. Size:3139K  cn szxunrui
 si9435.pdf

SOP-8 Plastic-Encapsulate MOSFETS SI9435 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The SI9435 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View Equivalent Cir cuit General Features S VDS = -30V = -4.2A RDS(ON)

 0.1. Size:66K  vishay
 si9435dy.pdf

 0.2. Size:241K  vishay
 si9435bdy.pdf

 0.3. Size:1809K  kexin
 si9435dy.pdf

SMD Type MOSFET P-Channel MOSFET SI9435DY SOP-8 Features VDS (V) =-30V ID =-5.3 A (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V) Fast switching speed 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 5 4 6 3 7 2 8 1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-

 0.4. Size:1669K  kexin
 si9435bdy.pdf

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET SI9435BDY (KI9435BDY) SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V 1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D P-Channel MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag

 0.5. Size:846K  cn vbsemi
 si9435dy-t1.pdf

SI9435DY-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D T

 0.6. Size:806K  cn vbsemi
 si9435bdy-t1-e3.pdf

SI9435BDY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5