NVATS5A302PLZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVATS5A302PLZ 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 84 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 430 nS
Cossⓘ - Capacitancia de salida: 500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: ATPAK
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NVATS5A302PLZ datasheet
nvats5a302plz.pdf
NVATS5A302PLZ Power MOSFET 60 V, 13 m , 80 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 13 m @ 10 V High Current Capability 60
nvats5a304plz.pdf
NVATS5A304PLZ Power MOSFET 60 V, 6.5 m , 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu
nvats5a114plz.pdf
NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V
nvats5a107plz.pdf
NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40
Otros transistores... SI8205S, SI9435, TX216521M6R, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ, IRFB3607, NVATS5A304PLZ, NVATS68301PZ, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F, NVBF170L
Parámetros del MOSFET. Cómo se afectan entre sí.
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