NVATS5A302PLZ MOSFET. Datasheet pdf. Equivalent
Type Designator: NVATS5A302PLZ
Marking Code: ATP302
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 430 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: ATPAK
NVATS5A302PLZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVATS5A302PLZ Datasheet (PDF)
nvats5a302plz.pdf
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nvats5a114plz.pdf
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nvats5a113plz.pdf
NVATS5A113PLZ Power MOSFET 60 V, 29.5 m, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features Low On-Resistance 29.5 m @ 10 V High Current Capability
nvats5a106plz.pdf
NVATS5A106PLZ Power MOSFET 40 V, 25 m, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V
nvats5a112plz.pdf
NVATS5A112PLZ Power MOSFET 60 V, 43 m, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive www.onsemi.com applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 43 m @ 10 V 60
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