NVBLS1D1N08H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVBLS1D1N08H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 311 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 351 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 1600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00105 Ohm

Encapsulados: TOLL

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NVBLS1D1N08H datasheet

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 nvbls1d1n08h.pdf pdf_icon

NVBLS1D1N08H

MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mW, 351 A NVBLS1D1N08H Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 1.05 mW @ 10 V 351 A Typical Ap

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 nvbls0d5n04m8.pdf pdf_icon

NVBLS1D1N08H

NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter

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 nvbls4d0n15mc.pdf pdf_icon

NVBLS1D1N08H

MOSFET Single N-Channel 150 V, 4.4 mW, 187 A NVBLS4D0N15MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 150 V 4.4 mW @ 10 V 187

 9.3. Size:394K  onsemi
 nvbls001n06c.pdf pdf_icon

NVBLS1D1N08H

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 mW, 422 A NVBLS001N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

MOSTRAR MÁS

Otros transistores... NVBG080N120SC1, NVBG160N120SC1, NVBGS4D1N15MC, NVBGS6D5N15MC, NVBLS001N06C, NVBLS0D5N04M8, NVBLS0D7N04M8, NVBLS0D7N06C, AO3407, NVBLS4D0N15MC, NVC3S5A51PLZ, NVD5C446N, NVD5C454N, NVD5C454NL, NVD5C632NL, NVD5C668NL, NVD5C688NL