Справочник MOSFET. NVBLS1D1N08H

 

NVBLS1D1N08H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVBLS1D1N08H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 311 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 351 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 43 ns
   Cossⓘ - Выходная емкость: 1600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00105 Ohm
   Тип корпуса: TOLL

 Аналог (замена) для NVBLS1D1N08H

 

 

NVBLS1D1N08H Datasheet (PDF)

 ..1. Size:413K  onsemi
 nvbls1d1n08h.pdf

NVBLS1D1N08H NVBLS1D1N08H

MOSFET - Power, SingleN-Channel, TOLL80 V, 1.05 mW, 351 ANVBLS1D1N08HFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 1.05 mW @ 10 V 351 ATypical Ap

 9.1. Size:490K  onsemi
 nvbls0d5n04m8.pdf

NVBLS1D1N08H NVBLS1D1N08H

NVBLS0D5N04M8MOSFET Power, Single,N-Channel40 V, 300 A, 0.57 mWFeatureswww.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

 9.2. Size:410K  onsemi
 nvbls4d0n15mc.pdf

NVBLS1D1N08H NVBLS1D1N08H

MOSFET Single N-Channel150 V, 4.4 mW, 187 ANVBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187

 9.3. Size:394K  onsemi
 nvbls001n06c.pdf

NVBLS1D1N08H NVBLS1D1N08H

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANVBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 9.4. Size:396K  onsemi
 nvbls0d7n06c.pdf

NVBLS1D1N08H NVBLS1D1N08H

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANVBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

 9.5. Size:481K  onsemi
 nvbls0d7n04m8.pdf

NVBLS1D1N08H NVBLS1D1N08H

NVBLS0D7N04M8MOSFET Power, Single,N-Channel40 V, 240 A, 0.75 mWFeatureswww.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

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History: GKI06259

 

 
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