NVBLS1D1N08H. Аналоги и основные параметры

Наименование производителя: NVBLS1D1N08H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 311 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 351 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 43 ns

Cossⓘ - Выходная емкость: 1600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00105 Ohm

Тип корпуса: TOLL

Аналог (замена) для NVBLS1D1N08H

- подборⓘ MOSFET транзистора по параметрам

 

NVBLS1D1N08H даташит

 ..1. Size:413K  onsemi
 nvbls1d1n08h.pdf pdf_icon

NVBLS1D1N08H

MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mW, 351 A NVBLS1D1N08H Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 1.05 mW @ 10 V 351 A Typical Ap

 9.1. Size:490K  onsemi
 nvbls0d5n04m8.pdf pdf_icon

NVBLS1D1N08H

NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter

 9.2. Size:410K  onsemi
 nvbls4d0n15mc.pdf pdf_icon

NVBLS1D1N08H

MOSFET Single N-Channel 150 V, 4.4 mW, 187 A NVBLS4D0N15MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 150 V 4.4 mW @ 10 V 187

 9.3. Size:394K  onsemi
 nvbls001n06c.pdf pdf_icon

NVBLS1D1N08H

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 mW, 422 A NVBLS001N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

ПОКАЗАТЬ ЕЩЁ

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