NVD6415ANL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD6415ANL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 91 nS
Cossⓘ - Capacitancia de salida: 156 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: DPAK
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NVD6415ANL Datasheet (PDF)
ntd6415anl nvd6415anl.pdf

NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS
nvd6415an.pdf

NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXV(BR)DSS RDS(on) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable100 V 55 mW @ 10 V 23 A These Devices
ntd6416an nvd6416an.pdf

NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
ntd6414an nvd6414an.pdf

NTD6414AN, NVD6414ANMOSFET Power,N-Channel100 V, 32 A, 37 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 37 mW @ 10 V 32 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
Otros transistores... NVBLS4D0N15MC , NVC3S5A51PLZ , NVD5C446N , NVD5C454N , NVD5C454NL , NVD5C632NL , NVD5C668NL , NVD5C688NL , MMIS60R580P , NVF2955P , NVH4L040N120SC1 , NVH4L080N120SC1 , NVH4L160N120SC1 , NVHL020N120SC1 , NVHL025N65S3 , NVHL027N65S3F , NVHL040N65S3F .
History: HFS13N50 | IRL540SPBF | AOD538 | 2SK3600-01L
History: HFS13N50 | IRL540SPBF | AOD538 | 2SK3600-01L



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