NVD6415ANL MOSFET. Datasheet pdf. Equivalent
Type Designator: NVD6415ANL
Marking Code: 6415ANL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 156 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: DPAK
NVD6415ANL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVD6415ANL Datasheet (PDF)
ntd6415anl nvd6415anl.pdf
NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS
nvd6415an.pdf
NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXV(BR)DSS RDS(on) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable100 V 55 mW @ 10 V 23 A These Devices
ntd6416an nvd6416an.pdf
NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
ntd6414an nvd6414an.pdf
NTD6414AN, NVD6414ANMOSFET Power,N-Channel100 V, 32 A, 37 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 37 mW @ 10 V 32 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
nvd6416an.pdf
NTD6416AN, NVD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXUnique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(on) MAX (Note 1)Qualified and PPAP Capable100 V 81 mW @ 10 V 17 A These Devices a
ntd6416anl nvd6416anl.pdf
NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free
nvd6414an.pdf
NTD6414AN, NVD6414ANN-Channel Power MOSFET100 V, 32 A, 37 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXV(BR)DSS RDS(on) MAXUnique Site and Control Change Requirements; AEC-Q101 (Note 1)Qualified and PPAP Capable100 V 37 mW @ 10 V 32 A These Devices
nvd6416anl.pdf
NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-F
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
