NVH4L080N120SC1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVH4L080N120SC1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 29 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO247-4L

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NVH4L080N120SC1 datasheet

 0.1. Size:415K  onsemi
 nvh4l080n120sc1.pdf pdf_icon

NVH4L080N120SC1

MOSFET Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 mW NVH4L080N120SC1 www.onsemi.com Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability VDSS RDS(ON) TYP ID MAX compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Co

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 nvh4l040n120sc1.pdf pdf_icon

NVH4L080N120SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 40 mW, 58 A NVH4L040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 56 mW @ 20 V 58 A AEC-Q101 Qualified and PPAP Capable This Device is Pb-Free

 9.1. Size:359K  onsemi
 nvh4l160n120sc1.pdf pdf_icon

NVH4L080N120SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 mW, 17.3 A NVH4L160N120SC1 Features Typ. RDS(on) = 160 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 34 nC) High Speed Switching with Low Capacitance (Coss = 49.5 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 224 mW @ 20 V 17.3 A AEC-Q101 Qualified and PPAP Capable This Device is P

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