NVH4L080N120SC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVH4L080N120SC1 Datasheet (PDF)

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MOSFET Power,N-Channel, Silicon Carbide,TO-247-4L1200 V, 80 mWNVH4L080N120SC1www.onsemi.comDescriptionSilicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilityVDSS RDS(ON) TYP ID MAXcompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Co

8.1. Size:364K onsemi
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MOSFET - SiC Power, SingleN-Channel, TO247-4L1200 V, 40 mW, 58 ANVH4L040N120SC1Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 56 mW @ 20 V 58 A AEC-Q101 Qualified and PPAP Capable This Device is Pb-Free

9.1. Size:359K onsemi
nvh4l160n120sc1.pdf pdf_icon

MOSFET - SiC Power, SingleN-Channel, TO247-4L1200 V, 160 mW, 17.3 ANVH4L160N120SC1Features Typ. RDS(on) = 160 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 34 nC) High Speed Switching with Low Capacitance (Coss = 49.5 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 224 mW @ 20 V 17.3 A AEC-Q101 Qualified and PPAP Capable This Device is P

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