NVHL072N65S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVHL072N65S3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 72.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: TO-247-3LD

Búsqueda de reemplazo de MOSFET NVHL072N65S3

NVHL072N65S3 Datasheet (PDF)

..1. Size:322K onsemi
nvhl072n65s3.pdf

NVHL072N65S3MOSFET Power,N-Channel, SUPERFET) III,Automotive, Easy-drive650 V, 44 A, 72 mWwww.onsemi.comDescriptionSuperFET III MOSFET is ON Semiconductors brand-new highBVDSS RDS(on) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 72 m @ 10 V 44 Acharge performa

9.1. Size:355K 1
nvhl055n60s5f.pdf

DATA SHEETwww.onsemi.comMOSFET Power, SingleVDSS RDS(ON) MAX ID MAX600 V 55 mW @ 10 V 45 AN-Channel, SUPERFET) V,FRFET), TO247-3LD600 V, 55 mW, 45 ANVHL055N60S5FDescriptionGThe SUPERFET V MOSFET FRFET series has optimized bodydiode performance characteristics. This can allow for the removal ofcomponents in the application and improve application performanceSa

9.2. Size:601K onsemi
nvhl027n65s3f.pdf

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 75 A, 27.4 mWNVHL027N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

9.3. Size:769K onsemi
nvhl060n090sc1.pdf

MOSFET - SiC Power, SingleN-Channel900 V, 60 mW, 46 ANVHL060N090SC1Features Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 Vwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 87 nC) Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX Qualified According to AEC-Q101900 V 84 mW @ 15 V 46 A

9.4. Size:371K onsemi
nvhl040n65s3f.pdf

NVHL040N65S3FMOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advance

9.5. Size:377K onsemi
nvhl082n65s3f.pdf

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 40 A, 82 mWNVHL082N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

9.6. Size:355K onsemi
nvhl050n65s3hf.pdf

MOSFET Power,NChannel, SUPERFET III,FRFET650 V, 58 A, 50 mWNVHL050N65S3HFwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored

9.7. Size:308K onsemi
nvhl020n120sc1.pdf

MOSFET - SiC Power, SingleN-ChannelNVHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 203 nC) Low Effective Output Capacitance (typ. Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 28 mW @ 20 V 103 A These Devices are RoHS CompliantTypical

9.8. Size:371K onsemi
nvhl080n120sc1.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical Ap

9.9. Size:368K onsemi
nvhl080n120sc1a.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical A

9.10. Size:393K onsemi
nvhl025n65s3.pdf

NVHL025N65S3MOSFET Power,N-Channel, AutomotiveSUPERFET) III, Easy-drive650 V, 75 A, 25 mWwww.onsemi.comDescriptionBVDSS RDS(on) MAX ID MAXSuperFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 25 m @ 10 V 75 Abalance technology for outstanding low on-resistance and lower gatecharge performan

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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