NVHL072N65S3 Specs and Replacement

Type Designator: NVHL072N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 72.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: TO-247-3LD

NVHL072N65S3 substitution

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NVHL072N65S3 datasheet

 ..1. Size:322K  onsemi
 nvhl072n65s3.pdf pdf_icon

NVHL072N65S3

NVHL072N65S3 MOSFET Power, N-Channel, SUPERFET) III, Automotive, Easy-drive 650 V, 44 A, 72 mW www.onsemi.com Description SuperFET III MOSFET is ON Semiconductor s brand-new high BVDSS RDS(on) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 72 m @ 10 V 44 A charge performa... See More ⇒

 9.1. Size:355K  1
 nvhl055n60s5f.pdf pdf_icon

NVHL072N65S3

DATA SHEET www.onsemi.com MOSFET Power, Single VDSS RDS(ON) MAX ID MAX 600 V 55 mW @ 10 V 45 A N-Channel, SUPERFET) V, FRFET), TO247-3L D 600 V, 55 mW, 45 A NVHL055N60S5F Description G The SUPERFET V MOSFET FRFET series has optimized body diode performance characteristics. This can allow for the removal of components in the application and improve application performance S a... See More ⇒

 9.2. Size:601K  onsemi
 nvhl027n65s3f.pdf pdf_icon

NVHL072N65S3

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NVHL027N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailore... See More ⇒

 9.3. Size:769K  onsemi
 nvhl060n090sc1.pdf pdf_icon

NVHL072N65S3

MOSFET - SiC Power, Single N-Channel 900 V, 60 mW, 46 A NVHL060N090SC1 Features Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 87 nC) Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX Qualified According to AEC-Q101 900 V 84 mW @ 15 V 46 A... See More ⇒

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Detailed specifications: NVH4L080N120SC1, NVH4L160N120SC1, NVHL020N120SC1, NVHL025N65S3, NVHL027N65S3F, NVHL040N65S3F, NVHL050N65S3HF, NVHL060N090SC1, IRF9640, NVHL080N120SC1, NVHL080N120SC1A, NVHL082N65S3F, NVHL160N120SC1, NVMFD016N06C, NVMFD020N06C, NVMFD024N06C, NVMFD030N06C

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