NVHL082N65S3F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVHL082N65S3F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 313 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
NVHL082N65S3F Datasheet (PDF)
nvhl082n65s3f.pdf

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 40 A, 82 mWNVHL082N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored
nvhl080n120sc1.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical Ap
nvhl080n120sc1a.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical A
nvhl055n60s5f.pdf

DATA SHEETwww.onsemi.comMOSFET Power, SingleVDSS RDS(ON) MAX ID MAX600 V 55 mW @ 10 V 45 AN-Channel, SUPERFET) V,FRFET), TO247-3LD600 V, 55 mW, 45 ANVHL055N60S5FDescriptionGThe SUPERFET V MOSFET FRFET series has optimized bodydiode performance characteristics. This can allow for the removal ofcomponents in the application and improve application performanceSa
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCE70N900I | IRF624A | SI6423DQ | IXFN64N60P | NTS2101PT1G | WNM3017 | SMP40N10
History: NCE70N900I | IRF624A | SI6423DQ | IXFN64N60P | NTS2101PT1G | WNM3017 | SMP40N10



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