NVHL082N65S3F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVHL082N65S3F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 313 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm

Encapsulados: TO-247

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NVHL082N65S3F datasheet

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nvhl082n65s3f.pdf pdf_icon

NVHL082N65S3F

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 40 A, 82 mW NVHL082N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored

 8.1. Size:371K  onsemi
nvhl080n120sc1.pdf pdf_icon

NVHL082N65S3F

MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NVHL080N120SC1 Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS Compliant Typical Ap

 8.2. Size:368K  onsemi
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NVHL082N65S3F

MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NVHL080N120SC1A Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS Compliant Typical A

 9.1. Size:355K  1
nvhl055n60s5f.pdf pdf_icon

NVHL082N65S3F

DATA SHEET www.onsemi.com MOSFET Power, Single VDSS RDS(ON) MAX ID MAX 600 V 55 mW @ 10 V 45 A N-Channel, SUPERFET) V, FRFET), TO247-3L D 600 V, 55 mW, 45 A NVHL055N60S5F Description G The SUPERFET V MOSFET FRFET series has optimized body diode performance characteristics. This can allow for the removal of components in the application and improve application performance S a

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