NVHL082N65S3F Specs and Replacement

Type Designator: NVHL082N65S3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO-247

NVHL082N65S3F substitution

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NVHL082N65S3F datasheet

 ..1. Size:377K  onsemi
nvhl082n65s3f.pdf pdf_icon

NVHL082N65S3F

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 40 A, 82 mW NVHL082N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored ... See More ⇒

 8.1. Size:371K  onsemi
nvhl080n120sc1.pdf pdf_icon

NVHL082N65S3F

MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NVHL080N120SC1 Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS Compliant Typical Ap... See More ⇒

 8.2. Size:368K  onsemi
nvhl080n120sc1a.pdf pdf_icon

NVHL082N65S3F

MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NVHL080N120SC1A Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS Compliant Typical A... See More ⇒

 9.1. Size:355K  1
nvhl055n60s5f.pdf pdf_icon

NVHL082N65S3F

DATA SHEET www.onsemi.com MOSFET Power, Single VDSS RDS(ON) MAX ID MAX 600 V 55 mW @ 10 V 45 A N-Channel, SUPERFET) V, FRFET), TO247-3L D 600 V, 55 mW, 45 A NVHL055N60S5F Description G The SUPERFET V MOSFET FRFET series has optimized body diode performance characteristics. This can allow for the removal of components in the application and improve application performance S a... See More ⇒

Detailed specifications: NVHL025N65S3, NVHL027N65S3F, NVHL040N65S3F, NVHL050N65S3HF, NVHL060N090SC1, NVHL072N65S3, NVHL080N120SC1, NVHL080N120SC1A, K2611, NVHL160N120SC1, NVMFD016N06C, NVMFD020N06C, NVMFD024N06C, NVMFD030N06C, NVMFD5853NWF, NVMFD5875NL, NVMFD5C446N

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