NVMFD5C446N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVMFD5C446N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 127 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: DFN8-5X6

Búsqueda de reemplazo de MOSFET NVMFD5C446N

NVMFD5C446N Datasheet (PDF)

..1. Size:268K onsemi
nvmfd5c446n.pdf

NVMFD5C446NPower MOSFET40 V, 2.9 mW, 127 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com NVMFD5C446NWF - Wettable Flank Option for Enhanced OpticalInspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These D

0.1. Size:209K onsemi
nvmfd5c446nl.pdf

NVMFD5C446NLMOSFET Power, DualN-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C446NLWF - Wettable Flank Option for Enhanced Optical2.65 mW @ 10 VInspection40 V145 A3.9 mW @ 4.5 V

6.1. Size:203K onsemi
nvmfd5c466n.pdf

NVMFD5C466NMOSFET Power, DualN-Channel40 V, 8.1 mW, 49 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C466NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 8.1 mW @ 10 V 49 A AEC-Q101 Qualified

6.2. Size:206K onsemi
nvmfd5c462n.pdf

NVMFD5C462NMOSFET Power, DualN-Channel40 V, 5.4 mW, 70 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C462NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 5.4 mW @ 10 V 70 A AEC-Q101 Qualified

6.3. Size:209K onsemi
nvmfd5c470n.pdf

NVMFD5C470NMOSFET Power, DualN-Channel40 V, 11.7 mW, 36 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

6.4. Size:208K onsemi
nvmfd5c466nl.pdf

NVMFD5C466NLMOSFET Power, DualN-Channel40 V, 7.4 mW, 52 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C466NLWF - Wettable Flank Option for Enhanced OpticalInspection7.4 mW @ 10 V40 V52 A AEC-Q101 Qualif

6.5. Size:207K onsemi
nvmfd5c462nl.pdf

NVMFD5C462NLMOSFET Power, DualN-Channel40 V, 4.7 mW, 84 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C462NLWF - Wettable Flank Option for Enhanced Optical4.7 mW @ 10 VInspection40 V84 A AEC-Q101 Qualif

6.6. Size:196K onsemi
nvmfd5c478n.pdf

NVMFD5C478NPower MOSFET40 V, 17.0 mW, 27 A, Dual N-ChannelFeatures Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

6.7. Size:200K onsemi
nvmfd5c470nl.pdf

NVMFD5C470NLMOSFET Power, DualN-Channel40 V, 11.5 mW, 36 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection11.5 mW @ 10 V40 V AEC-Q101 Qualified

6.8. Size:155K onsemi
nvmfd5c478nl.pdf

NVMFD5C478NLPower MOSFET40 V, 14.5 mW, 29 A, Dual N-ChannelFeatures Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co

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