NVMFD5C446N - описание и поиск аналогов

 ..1. Size:268K  onsemi
 nvmfd5c446n.pdf 

NVMFD5C446N Power MOSFET 40 V, 2.9 mW, 127 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com NVMFD5C446NWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These D

 0.1. Size:209K  onsemi
 nvmfd5c446nl.pdf 

NVMFD5C446NL MOSFET Power, Dual N-Channel 40 V, 2.65 mW, 145 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C446NLWF - Wettable Flank Option for Enhanced Optical 2.65 mW @ 10 V Inspection 40 V 145 A 3.9 mW @ 4.5 V

 6.1. Size:203K  onsemi
 nvmfd5c466n.pdf 

NVMFD5C466N MOSFET Power, Dual N-Channel 40 V, 8.1 mW, 49 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C466NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 8.1 mW @ 10 V 49 A AEC-Q101 Qualified

 6.2. Size:206K  onsemi
 nvmfd5c462n.pdf 

NVMFD5C462N MOSFET Power, Dual N-Channel 40 V, 5.4 mW, 70 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C462NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 5.4 mW @ 10 V 70 A AEC-Q101 Qualified

 6.3. Size:209K  onsemi
 nvmfd5c470n.pdf 

NVMFD5C470N MOSFET Power, Dual N-Channel 40 V, 11.7 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

 6.4. Size:208K  onsemi
 nvmfd5c466nl.pdf 

NVMFD5C466NL MOSFET Power, Dual N-Channel 40 V, 7.4 mW, 52 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C466NLWF - Wettable Flank Option for Enhanced Optical Inspection 7.4 mW @ 10 V 40 V 52 A AEC-Q101 Qualif

 6.5. Size:207K  onsemi
 nvmfd5c462nl.pdf 

NVMFD5C462NL MOSFET Power, Dual N-Channel 40 V, 4.7 mW, 84 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C462NLWF - Wettable Flank Option for Enhanced Optical 4.7 mW @ 10 V Inspection 40 V 84 A AEC-Q101 Qualif

 6.6. Size:196K  onsemi
 nvmfd5c478n.pdf 

NVMFD5C478N Power MOSFET 40 V, 17.0 mW, 27 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

 6.7. Size:200K  onsemi
 nvmfd5c470nl.pdf 

NVMFD5C470NL MOSFET Power, Dual N-Channel 40 V, 11.5 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 11.5 mW @ 10 V 40 V AEC-Q101 Qualified

 6.8. Size:155K  onsemi
 nvmfd5c478nl.pdf 

NVMFD5C478NL Power MOSFET 40 V, 14.5 mW, 29 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co