NVMFD6H846NL Todos los transistores

 ..1. Size:204K  onsemi
 nvmfd6h846nl.pdf

MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NVMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD6H846NLWF - Wettable Flank Option for Enhanced 15 mW @ 10 V Optical Inspection 80 V 31 A 19 mW @ 4.5 V AEC-

 5.1. Size:194K  onsemi
 nvmfd6h840nl.pdf

NVMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFD6H840NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.9 mW @ 1

 6.1. Size:190K  onsemi
 nvmfd6h852nl.pdf

NVMFD6H852NL Power MOSFET 80 V, 25.5 mW, 25 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFD6H852NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 25.5 mW @

 9.1. Size:840K  1
 nvmfd5485nlt1g.pdf

 9.2. Size:229K  1
 nvmfd024n06ct1g.pdf

MOSFET Power, Dual N-Channel, SO-8FL 60 V, 22.6 mW, 24 A NVMFD024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical 60 V 22.6 mW @ 10 V 24 A Inspection AEC-Q101

 9.3. Size:200K  1
 nvmfd5483nlt1g.pdf

NVMFD5483NL MOSFET Power, Dual N-Channel 60 V, 36 mW, 24 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 36 mW @ 10 V 175 C Operating Temperature 60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4

 9.4. Size:206K  onsemi
 nvmfd5c668nl.pdf

NVMFD5C668NL MOSFET Power, Dual N-Channel 60 V, 6.5 mW, 68 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C668NLWF - Wettable Flank Option for Enhanced Optical 6.5 mW @ 10 V 60 V Inspection 68 A 9.2 mW @ 4.5 V

 9.5. Size:209K  onsemi
 nvmfd5c446nl.pdf

NVMFD5C446NL MOSFET Power, Dual N-Channel 40 V, 2.65 mW, 145 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C446NLWF - Wettable Flank Option for Enhanced Optical 2.65 mW @ 10 V Inspection 40 V 145 A 3.9 mW @ 4.5 V

 9.6. Size:203K  onsemi
 nvmfd5c466n.pdf

NVMFD5C466N MOSFET Power, Dual N-Channel 40 V, 8.1 mW, 49 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C466NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 8.1 mW @ 10 V 49 A AEC-Q101 Qualified

 9.7. Size:163K  onsemi
 nvmfd016n06c.pdf

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 mW, 32 A NVMFD016N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10

 9.8. Size:120K  onsemi
 nvmfd5853n.pdf

NVMFD5853N, NVMFD5853NWF Power MOSFET 40 V, 10 mW, 53 A, Dual N-Channel, Dual SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product 40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

 9.9. Size:76K  onsemi
 nvmfd5483nl.pdf

 9.10. Size:268K  onsemi
 nvmfd5c446n.pdf

NVMFD5C446N Power MOSFET 40 V, 2.9 mW, 127 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com NVMFD5C446NWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These D

 9.11. Size:208K  onsemi
 nvmfd5c650nl.pdf

NVMFD5C650NL MOSFET Power, Dual N-Channel 60 V, 4.2 mW, 111 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical 4.2 mW @ 10 V Inspection 60 V 111 A AEC-Q101 Qual

 9.12. Size:227K  onsemi
 nvmfd030n06c.pdf

MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 mW, 19 A NVMFD030N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 29.7 mW @ 10 V 19 A AEC-Q

 9.13. Size:206K  onsemi
 nvmfd5c462n.pdf

NVMFD5C462N MOSFET Power, Dual N-Channel 40 V, 5.4 mW, 70 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C462NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 5.4 mW @ 10 V 70 A AEC-Q101 Qualified

 9.14. Size:224K  onsemi
 nvmfd020n06c.pdf

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 mW, 27 A NVMFD020N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 20.3 mW @ 10 V 27 A AEC-Q1

 9.15. Size:76K  onsemi
 nvmfd5485nl.pdf

 9.16. Size:206K  onsemi
 nvmfd5c672nl.pdf

MOSFET Power, Dual N-Channel 60 V, 11.9 mW, 40 A NVMFD5C672NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C672NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 11.9 mW @ 10 V 60 V 40 A AEC-Q101 Quali

 9.17. Size:209K  onsemi
 nvmfd5c470n.pdf

NVMFD5C470N MOSFET Power, Dual N-Channel 40 V, 11.7 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

 9.18. Size:208K  onsemi
 nvmfd5c466nl.pdf

NVMFD5C466NL MOSFET Power, Dual N-Channel 40 V, 7.4 mW, 52 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C466NLWF - Wettable Flank Option for Enhanced Optical Inspection 7.4 mW @ 10 V 40 V 52 A AEC-Q101 Qualif

 9.19. Size:202K  onsemi
 nvmfd5853n nvmfd5853nwf.pdf

NVMFD5853N, NVMFD5853NWF MOSFET Dual N-Channel, Dual SO-8FL 40 V, 10 mW, 53 A http //onsemi.com Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

 9.20. Size:78K  onsemi
 nvmfd5852nl.pdf

NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical 6.9 mW @ 10 V Inspection 40 V 44 A

 9.21. Size:207K  onsemi
 nvmfd5c462nl.pdf

NVMFD5C462NL MOSFET Power, Dual N-Channel 40 V, 4.7 mW, 84 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C462NLWF - Wettable Flank Option for Enhanced Optical 4.7 mW @ 10 V Inspection 40 V 84 A AEC-Q101 Qualif

 9.22. Size:340K  onsemi
 nvmfd5c680nl.pdf

NVMFD5C680NL MOSFET Power, Dual N-Channel 60 V, 28 mW, 26 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C680NLWF - Wettable Flank Option for Enhanced Optical 28 mW @ 10 V 60 V Inspection 26 A 41 mW @ 4.5 V AE

 9.23. Size:199K  onsemi
 nvmfd5877nl.pdf

NVMFD5877NL MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 39 mW, 17 A http //onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical 60 V 17 A Inspection 60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap

 9.24. Size:76K  onsemi
 nvmfd5873nl.pdf

NVMFD5873NL Power MOSFET 60 V, 13 mW, 58 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical 13 mW @ 10 V Inspection 60 V 58 A 16.5

 9.25. Size:75K  onsemi
 nvmfd5853nl.pdf

NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical 10 mW @ 10 V Inspection 40 V 34 A A

 9.26. Size:196K  onsemi
 nvmfd5c478n.pdf

NVMFD5C478N Power MOSFET 40 V, 17.0 mW, 27 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

 9.27. Size:229K  onsemi
 nvmfd024n06c.pdf

MOSFET Power, Dual N-Channel, SO-8FL 60 V, 22.6 mW, 24 A NVMFD024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical 60 V 22.6 mW @ 10 V 24 A Inspection AEC-Q101

 9.28. Size:347K  onsemi
 nvmfd5c674nl.pdf

MOSFET Power, Dual N-Channel 60 V, 14.4 mW, 42 A NVMFD5C674NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C674NLWF - Wettable Flank Option for Enhanced Optical 14.4 mW @ 10 V Inspection 60 V 42 A AEC-Q101 Qual

 9.29. Size:201K  onsemi
 nvmfd5875nl.pdf

NVMFD5875NL MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A www.onsemi.com Features Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical 60 V 22 A 45 mW @ 4.5 V Inspection AEC-Q101 Qualified and PPAP Capabl

 9.30. Size:77K  onsemi
 nvmfd5489nl.pdf

NVMFD5489NL Power MOSFET 60 V, 65 mW, 12 A, Dual N-Ch Logic Level Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses 175 C Operating Temperature V(BR)DSS RDS(on) MAX ID MAX NVMFD5489NLWF - Wettable Flank Option for Enhanced Optical 65 mW @ 10 V Inspection 60 V

 9.31. Size:200K  onsemi
 nvmfd5c470nl.pdf

NVMFD5C470NL MOSFET Power, Dual N-Channel 40 V, 11.5 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 11.5 mW @ 10 V 40 V AEC-Q101 Qualified

 9.32. Size:155K  onsemi
 nvmfd5c478nl.pdf

NVMFD5C478NL Power MOSFET 40 V, 14.5 mW, 29 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co