NVMFS015N10MCL Todos los transistores

 

NVMFS015N10MCL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFS015N10MCL
   Código: 015L10_015W10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 47.1 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 2.7 nS
   Cossⓘ - Capacitancia de salida: 521 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0122 Ohm
   Paquete / Cubierta: DFN5
 

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NVMFS015N10MCL Datasheet (PDF)

 ..1. Size:189K  onsemi
 nvmfs015n10mcl.pdf pdf_icon

NVMFS015N10MCL

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 47.1 ANVMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced12.2 mW @ 10 VOptical Inspection100 V 47.1 A18.3 mW @

 7.1. Size:175K  onsemi
 nvmfs016n06c.pdf pdf_icon

NVMFS015N10MCL

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANVMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 15.6 mW @ 10 V 33 A AEC-Q101

 8.1. Size:176K  onsemi
 nvmfs020n06c.pdf pdf_icon

NVMFS015N10MCL

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 19.6 mW, 28 ANVMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 19.6 mW @ 10 V 28 A AEC-Q101

 8.2. Size:177K  onsemi
 nvmfs024n06c.pdf pdf_icon

NVMFS015N10MCL

MOSFET - Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANVMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

MOSTRAR MÁS

Otros transistores... NVMFD5C650NL , NVMFD5C668NL , NVMFD5C672NL , NVMFD5C674NL , NVMFD5C680NL , NVMFD6H840NL , NVMFD6H846NL , NVMFD6H852NL , IRF3710 , NVMFS016N06C , NVMFS020N06C , NVMFS024N06C , NVMFS3D6N10MCL , NVMFS4C302N , NVMFS4C310N , NVMFS5A140PLZ , NVMFS5A160PLZ .

History: NCE65N330R | PMN230ENEA

 

 
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