All MOSFET. NVMFS015N10MCL Datasheet

 

NVMFS015N10MCL Datasheet and Replacement


   Type Designator: NVMFS015N10MCL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47.1 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 521 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: DFN5
 

 NVMFS015N10MCL substitution

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NVMFS015N10MCL Datasheet (PDF)

 ..1. Size:189K  onsemi
nvmfs015n10mcl.pdf pdf_icon

NVMFS015N10MCL

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 47.1 ANVMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced12.2 mW @ 10 VOptical Inspection100 V 47.1 A18.3 mW @

 7.1. Size:175K  onsemi
nvmfs016n06c.pdf pdf_icon

NVMFS015N10MCL

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANVMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 15.6 mW @ 10 V 33 A AEC-Q101

 8.1. Size:176K  onsemi
nvmfs020n06c.pdf pdf_icon

NVMFS015N10MCL

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 19.6 mW, 28 ANVMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 19.6 mW @ 10 V 28 A AEC-Q101

 8.2. Size:177K  onsemi
nvmfs024n06c.pdf pdf_icon

NVMFS015N10MCL

MOSFET - Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANVMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

Datasheet: NVMFD5C650NL , NVMFD5C668NL , NVMFD5C672NL , NVMFD5C674NL , NVMFD5C680NL , NVMFD6H840NL , NVMFD6H846NL , NVMFD6H852NL , IRF3710 , NVMFS016N06C , NVMFS020N06C , NVMFS024N06C , NVMFS3D6N10MCL , NVMFS4C302N , NVMFS4C310N , NVMFS5A140PLZ , NVMFS5A160PLZ .

History: BRA10N65 | SSM6N44FE | SSF13N50 | UTT6NP10G-S08-R | SIA537EDJ | CEM2192 | QM2N7002E3K1

Keywords - NVMFS015N10MCL MOSFET datasheet

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