NVMFS024N06C Todos los transistores

 

NVMFS024N06C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFS024N06C
   Código: 24N06C_24N06W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.7 nC
   trⓘ - Tiempo de subida: 1.3 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: DFN5
 

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NVMFS024N06C Datasheet (PDF)

 ..1. Size:177K  onsemi
 nvmfs024n06c.pdf pdf_icon

NVMFS024N06C

MOSFET - Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANVMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

 7.1. Size:176K  onsemi
 nvmfs020n06c.pdf pdf_icon

NVMFS024N06C

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 19.6 mW, 28 ANVMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 19.6 mW @ 10 V 28 A AEC-Q101

 8.1. Size:189K  onsemi
 nvmfs015n10mcl.pdf pdf_icon

NVMFS024N06C

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 47.1 ANVMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced12.2 mW @ 10 VOptical Inspection100 V 47.1 A18.3 mW @

 8.2. Size:175K  onsemi
 nvmfs016n06c.pdf pdf_icon

NVMFS024N06C

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANVMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 15.6 mW @ 10 V 33 A AEC-Q101

MOSTRAR MÁS

Otros transistores... NVMFD5C674NL , NVMFD5C680NL , NVMFD6H840NL , NVMFD6H846NL , NVMFD6H852NL , NVMFS015N10MCL , NVMFS016N06C , NVMFS020N06C , IRFB4227 , NVMFS3D6N10MCL , NVMFS4C302N , NVMFS4C310N , NVMFS5A140PLZ , NVMFS5A160PLZ , NVMFS5C406N , NVMFS5C406NL , NVMFS5C410N .

History: IRF4104SPBF | HGD035N08AL

 

 
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