All MOSFET. NVMFS024N06C Datasheet

 

NVMFS024N06C Datasheet and Replacement


   Type Designator: NVMFS024N06C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN5
 

 NVMFS024N06C substitution

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NVMFS024N06C Datasheet (PDF)

 ..1. Size:177K  onsemi
nvmfs024n06c.pdf pdf_icon

NVMFS024N06C

MOSFET - Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANVMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

 7.1. Size:176K  onsemi
nvmfs020n06c.pdf pdf_icon

NVMFS024N06C

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 19.6 mW, 28 ANVMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 19.6 mW @ 10 V 28 A AEC-Q101

 8.1. Size:189K  onsemi
nvmfs015n10mcl.pdf pdf_icon

NVMFS024N06C

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 47.1 ANVMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced12.2 mW @ 10 VOptical Inspection100 V 47.1 A18.3 mW @

 8.2. Size:175K  onsemi
nvmfs016n06c.pdf pdf_icon

NVMFS024N06C

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANVMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 15.6 mW @ 10 V 33 A AEC-Q101

Datasheet: NVMFD5C674NL , NVMFD5C680NL , NVMFD6H840NL , NVMFD6H846NL , NVMFD6H852NL , NVMFS015N10MCL , NVMFS016N06C , NVMFS020N06C , IRFB4227 , NVMFS3D6N10MCL , NVMFS4C302N , NVMFS4C310N , NVMFS5A140PLZ , NVMFS5A160PLZ , NVMFS5C406N , NVMFS5C406NL , NVMFS5C410N .

History: FTK2N65P

Keywords - NVMFS024N06C MOSFET datasheet

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