NVMFS3D6N10MCL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFET - Power, SingleN-Channel100 V, 3.6 mW, 132 ANVMFS3D6N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS3D6N10MCL - Wettable Flank Option for Enhanced3.6 mW @ 10 VOptical Inspection100 V 132 A5.8 mW @ 4.5

MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali

NVMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8 mW

NVMFS5C404NLPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.7

MOSFET - Power, SingleN-Channel80 V, 4.5 mW, 107 ANVMFS6H824NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie

NVMFS4C302NPower MOSFET30 V, 1.15 mW, 241 A, Single N-ChannelLogic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical1.15 mW @ 10 VInspection30 V241 A

NVMFS5C460NMOSFET Power, SingleN-Channel40 V, 5.3 mW, 71 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NWF - Wettable Flank Option for Enhanced OpticalInspection 40 V 5.3 mW @ 10 V 71 A AEC-Q101 Qualified

NVMFS6H818NMOSFET Power, SingleN-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H818NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 3.7 mW @ 10 V 123 A AEC-Q101 Qualif

NVMFS5C456NLMOSFET Power, SingleN-Channel40 V, 3.7 mW, 87 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NLWF - Wettable Flank Option for Enhanced Optical3.7 mW @ 10 VInspection40 V 87 A6.0 mW @ 4.5 V

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANVMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical60 V 7.0 mW @ 10 V 71 AInspection AEC-Q101 Qualifi

NVMFS5832NLPower MOSFET40 V, 4.2 mW, 120 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAX4.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

NVMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.2 mW

MOSFET - Power, SingleN-Channel80 V, 9.4 mW, 64 ANVMFS6H848NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 9.4 mW @ 10 V 64 A AEC-Q101 Qualified

NVMFS5H663NL,NVMFS5H663NLWFMOSFET Power, SingleN-Channel60 V, 7.2 mW, 67 Awww.onsemi.comNVMFS5H663NLWF - Wettable Flank Option for EnhancedOptical Inspection.V(BR)DSS RDS(ON) MAX ID MAXFeatures Small Footprint (5x6 mm) for Compact Design7.2 mW @ 10 V60 V67 A Low RDS(on) to Minimize Conduction Losses10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri

NVMFS5C680NLMOSFET Power, SingleN-Channel60 V, 27.5 mW, 21 AFeatures Small Footprint (5 x 6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable27.5 mW @ 10 V60 V 21 A These D

NVMFS6B14NLPower MOSFET100 V, 13 mW, 55 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6B14NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13 mW @ 10

NVMFS4841NPower MOSFET30V, 7 mW, 89A, Single N-Channel SO8FLFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAX7.0 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6

NVMFS5C460NLMOSFET Power, SingleN-Channel40 V, 4.5 mW, 78 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NLWF - Wettable Flank Option for Enhanced Optical4.5 mW @ 10 VInspection 40 V 78 A7.2 mW @ 4.5 V

NVMFS5C410NLPower MOSFET40 V, 0.9 mW, 315 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.9

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 47.1 ANVMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced12.2 mW @ 10 VOptical Inspection100 V 47.1 A18.3 mW @

MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANVMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical60 V 10.7 mW @ 10 V 50 AInspection AEC-Q101 Quali

MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANVMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H801NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection2.7 mW @ 10 V AEC-Q101 Qualified and PPA

MOSFET - Power, SingleN-Channel80 V, 14.2 mW, 43 ANVMFS6H852NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie

MOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 ANVMFS5C628NFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 3.0 mW @ 10 V 150 A AEC-Q101 Qualifie

NVMFS5C638NLMOSFET Power, SingleN-Channel60 V, 3.0 mW, 133 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical3.0 mW @ 10 VInspection60 V 133 A AEC-Q101 Qua

MOSFET - Power, SingleN-Channel80 V, 32 mW, 23 ANVMFS6H864NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H864NWF - Wettable Flank Option for Enhanced Optical80 V 32 mW @ 10 V 23 AInspection AEC-Q101 Qualified an

NVMFS5833NPower MOSFET40 V, 7.5 mW, 86 A, Single N-Channel,SO-8FLFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical40 V 7.5 mW @ 10 V 86 AInspection These Devices are Pb-Free and are RoHS CompliantD (5)

NVMFS6D1N08HPower MOSFET80 V, 5.5 mW, 89 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFSW6D1N08H - Wettable Flank Option for Enhanced OpticalInspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These

MOSFET Power, SingleN-Channel60 V, 1.3 mW, 250 ANVMFS5H600NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.3 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

NVMFS5C468NMOSFET Power, SingleN-Channel40 V, 12 mW, 35 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NWF - Wettable Flank Option for Enhanced Optical40 V 12 mW @ 10 V 35 AInspection AEC-Q101 Qualified

MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANVMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H818NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection3.2 mW @ 10 V AEC-Q101 Qualified and PPA

MOSFET Power, Single,N-Channel80 V, 2.8 mW, 157 ANVMFS6H801NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H801NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 2.8 mW @ 10 V 157 A AEC-Q101 Quali

NVMFS5C404NPower MOSFET40 V, 0.7 mW, 378 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 0.7

NVMFS5C682NLMOSFET Power, SingleN-Channel60 V, 21 mW, 25 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical21 mW @ 10 V60 V 25 AInspection31.5 mW @ 4.5 V

NVMFS4841NPower MOSFET30V, 7 mW, 89A, Single N-Channel SO8FLFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are

MOSFET Power, SingleN-Channel60 V, 9.2 mW, 50 ANVMFS5C673NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical9.2 mW @ 10 V60 V 50 AInspection13 mW @ 4.5 V

NVMFS5A160PLZMOSFET Power, SingleP-Channel-60 V, -100 A, 7.7 mWFeatureswww.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesVDSS RDS(ON) MAX ID MAX NVMFS5A160PLZWF: Wettable Flank Option for Enhanced Optical-60 V 7.7 mW @ -10 V -100 AInspection10.5 mW @ -4.5 V AEC-Q101 Qualified and PPAP Capable Thes

NVMFS5830NLPower MOSFET40 V, 2.3 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are

NVMFS6B75NLPower MOSFET100 V, 30 mW, 28 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com NVMFS6B75NLWF - Wettable Flank Option for Enhanced OpticalInspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These

NTMFS5844NL,NVMFS5844NLMOSFET Power, Single,N-Channel60 V, 61 A, 12 mWFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product12 mW @ 10 V60 V 61 A NVMFS Prefix for Automotive and

NVMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.5 mW

MOSFET Power, SingleN-Channel40 V, 1.2 mW, 237 ANVMFS5C426NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C426NLWF - Wettable Flank Option for Enhanced Optical1.2 mW @ 10 VInspection40 V 237 A1.8 mW @ 4.5 V

NVMFS5A140PLZMOSFET Power, SingleP-Channel-40 V, -140 A, 4.2 mWFeatureswww.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical VDSS RDS(ON) MAX ID MAXInspection-40 V 4.2 mW @ -10 V -140 A AEC-Q101 Qualified and PPAP Capable7.2 mW @ -4.5 V These

NVMFS5885NLPower MOSFET60 V, 15 mW, 39 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVMFS5885NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Com

NVMFS5C612NPower MOSFETSingle N-Channel, 60 V, 1.65 mW, 225 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 1.6

NVMFS5C430NMOSFET Power, SingleN-Channel40 V, 1.7 mW, 185 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NWF - Wettable Flank Option for Enhanced Optical40 V 1.7 mW @ 10 V 185 AInspection AEC-Q101 Qualif

NVMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6H800NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable The

MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANVMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NLWF - Wettable Flank Option for Enhanced OpticalInspection6.2 mW @ 10 V80 V77 A AEC-Q101 Qualif

MOSFET - Power, SingleN-Channel80 V, 6.7 mW, 80 ANVMFS6H836NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 6.7 mW @ 10 V 80 A AEC-Q101 Qualified

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 19.6 mW, 28 ANVMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 19.6 mW @ 10 V 28 A AEC-Q101

NVMFS5C406NLMOSFET Power, SingleN-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C406NLWF - Wettable Flank Option for Enhanced Optical0.7 mW @ 10 VInspection40 V 362 A AEC-Q101 Qua

NVMFS5C430NLMOSFET Power, SingleN-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NLWF - Wettable Flank Option for Enhanced Optical1.4 mW @ 10 V40 V 200 AInspection2.2 mW @ 4.5 V

MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANVMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 15.6 mW @ 10 V 33 A AEC-Q101

NVMFS4C05NPower MOSFET30 V, 116 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable3.4 mW

NVMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.0 mW

NVMFS5C468NLMOSFET Power, SingleN-Channel40 V, 10.3 mW, 37 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NLWF - Wettable Flank Option for Enhanced Optical10.3 mW @ 10 VInspection40 V 37 A17.6 mW @ 4.5 V

NVMFS5C466NMOSFET Power, SingleN-Channel40 V, 8.1 mW, 49 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C466NWF - Wettable Flank Option for Enhanced Optical40 V 8.1 mW @ 10 V 49 AInspection AEC-Q101 Qualifie

NVMFS5H663NL,NVMFS5H663NLWFMOSFET Power, SingleN-Channel60 V, 7.2 mW, 67 Awww.onsemi.comNVMFS5H663NLWF - Wettable Flank Option for EnhancedOptical Inspection.V(BR)DSS RDS(ON) MAX ID MAXFeatures Small Footprint (5x6 mm) for Compact Design7.2 mW @ 10 V60 V67 A Low RDS(on) to Minimize Conduction Losses10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri

NVMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.3

NVMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.1 mW @

MOSFET - Power, SingleN-Channel80 V, 4 mW, 110 ANVMFS6H824NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H824NLWF - Wettable Flank Option for Enhanced OpticalInspection4 mW @ 10 V80 V 110 A AEC-Q101 Qualified

NVMFS4C03NPower MOSFET30 V, 2.1 mW, 143 A, Single N-ChannelLogic Level, SO-8FLFeatures http://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses2.1 mW @ 10 V30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A2.8 mW @ 4.5

NVMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.0 mW

NVMFS5C442NLPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com NVMFS5C442NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVMFS6H864NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection29 mW @ 10 V AEC-Q101 Qualified and PPAP C

MOSFET - Power, SingleN-Channel40 V, 0.8 mW, 353 ANVMFS5C406NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C406NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.8 mW @ 10 V 353 A AEC-Q101 Qualifie

NVMFS5C426NPower MOSFET40 V, 1.3 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 1.3

NVMFS4C01NPower MOSFET30 V, 0.9 mW, 319 A, Single N-Channel,Logic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical0.9 mW @ 10 VInspection30 V319 A

MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANVMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection8.8 mW @ 10 V AEC-Q101 Qualified and PPAP

NVMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @

NVMFS5834NLProduct PreviewPower MOSFET40 V, 9.3 mW, 76 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

NVMFS4C310NPower MOSFET30 V, 51 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.0 mW @

MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANVMFS6H852NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced OpticalInspection13.1 mW @ 10 V80 V 42 A AEC-Q101 Quali

MOSFET - Power, SingleN-Channel80 V, 20.7 mW, 32 ANVMFS6H858NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie

NVMFS5C450NMOSFET Power, SingleN-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C450NWF - Wettable Flank Option for Enhanced Optical40 V 3.3 mW @ 10 V 102 AInspection AEC-Q101 Qualif

NVMFS5113PLPower MOSFET-60 V, 14 mW, -64 A, Single P-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com NVMFS5113PLWF - Wettable Flanks Product NVM Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) IDUnique Site and Control Change Requirements; AEC-Q10114 mW @ -

NVMFS5C628NLMOSFET Power, SingleN-Channel60 V, 2.4 mW, 150 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C628NLWF - Wettable Flank Option for Enhanced Optical2.4 mW @ 10 V60 V 150 AInspection3.3 mW @ 4.5 V

NVMFS5826NLPower MOSFET60 V, 24 mW, 26 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices and RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX24 mW @ 10 V60 VMAXIMUM RATINGS

NTMFS5844NL,NVMFS5844NLPower MOSFET60 V, 61 A, 12 mW, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX ID MAXUnique Site and Control Change Requirements;

MOSFET Power, SingleN-Channel40 V, 4.5 mW, 80 ANVMFS5C456NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NWF - Wettable Flank Option for Enhanced Optical40 V 4.5 mW @ 10 V 80 AInspection AEC-Q101 Qualifie

MOSFET - Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANVMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

MOSFET - Power, SingleN-Channel40 V, 0.92 mW, 300 ANVMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.92 mW @ 10 V 300 A AEC-Q101 Qualif