NVMFS3D6N10MCL - описание и поиск аналогов

 ..1. Size:195K  onsemi
 nvmfs3d6n10mcl.pdf 

MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 132 A NVMFS3D6N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWS3D6N10MCL - Wettable Flank Option for Enhanced 3.6 mW @ 10 V Optical Inspection 100 V 132 A 5.8 mW @ 4.5

 9.1. Size:174K  onsemi
 nvmfs6h858nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A NVMFS6H858NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced Optical Inspection 19.5 mW @ 10 V 80 V 30 A AEC-Q101 Quali

 9.2. Size:160K  onsemi
 nvmfs5c450nl.pdf 

NVMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.8 mW

 9.3. Size:75K  onsemi
 nvmfs5c404nl.pdf 

NVMFS5C404NL Power MOSFET 40 V, 0.75 mW, 352 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 0.7

 9.4. Size:176K  onsemi
 nvmfs6h824n.pdf 

MOSFET - Power, Single N-Channel 80 V, 4.5 mW, 107 A NVMFS6H824N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie

 9.5. Size:119K  onsemi
 nvmfs4c302n.pdf 

NVMFS4C302N Power MOSFET 30 V, 1.15 mW, 241 A, Single N-Channel Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical 1.15 mW @ 10 V Inspection 30 V 241 A

 9.6. Size:180K  onsemi
 nvmfs5c460n.pdf 

NVMFS5C460N MOSFET Power, Single N-Channel 40 V, 5.3 mW, 71 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NWF - Wettable Flank Option for Enhanced Optical Inspection 40 V 5.3 mW @ 10 V 71 A AEC-Q101 Qualified

 9.7. Size:174K  onsemi
 nvmfs6h818n.pdf 

NVMFS6H818N MOSFET Power, Single N-Channel 80 V, 3.7 mW, 123 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H818NWF - Wettable Flank Option for Enhanced Optical Inspection 80 V 3.7 mW @ 10 V 123 A AEC-Q101 Qualif

 9.8. Size:174K  onsemi
 nvmfs5c456nl.pdf 

 9.9. Size:167K  onsemi
 nvmfs5c670n.pdf 

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NVMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical 60 V 7.0 mW @ 10 V 71 A Inspection AEC-Q101 Qualifi

 9.10. Size:108K  onsemi
 nvmfs5832nl.pdf 

NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com AEC-Q101 Qualified These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX 4.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

 9.11. Size:72K  onsemi
 nvmfs5c604nl.pdf 

NVMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.2 mW

 9.12. Size:177K  onsemi
 nvmfs6h848n.pdf 

MOSFET - Power, Single N-Channel 80 V, 9.4 mW, 64 A NVMFS6H848N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 9.4 mW @ 10 V 64 A AEC-Q101 Qualified

 9.13. Size:170K  onsemi
 nvmfs5h663nl nvmfs5h663nlwf.pdf 

NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 mW, 67 A www.onsemi.com NVMFS5H663NLWF - Wettable Flank Option for Enhanced Optical Inspection. V(BR)DSS RDS(ON) MAX ID MAX Features Small Footprint (5x6 mm) for Compact Design 7.2 mW @ 10 V 60 V 67 A Low RDS(on) to Minimize Conduction Losses 10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri

 9.14. Size:173K  onsemi
 nvmfs5c680nl.pdf 

NVMFS5C680NL MOSFET Power, Single N-Channel 60 V, 27.5 mW, 21 A Features Small Footprint (5 x 6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 27.5 mW @ 10 V 60 V 21 A These D

 9.15. Size:79K  onsemi
 nvmfs6b14nl.pdf 

NVMFS6B14NL Power MOSFET 100 V, 13 mW, 55 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6B14NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13 mW @ 10

 9.16. Size:113K  onsemi
 nvmfs4841n-d.pdf 

NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N-Channel SO8FL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 7.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

 9.17. Size:112K  onsemi
 ntmfs5834nl nvmfs5834nl.pdf 

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6

 9.18. Size:134K  onsemi
 nvmfs5c460nl.pdf 

NVMFS5C460NL MOSFET Power, Single N-Channel 40 V, 4.5 mW, 78 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NLWF - Wettable Flank Option for Enhanced Optical 4.5 mW @ 10 V Inspection 40 V 78 A 7.2 mW @ 4.5 V

 9.19. Size:71K  onsemi
 nvmfs5c410nl.pdf 

NVMFS5C410NL Power MOSFET 40 V, 0.9 mW, 315 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 0.9

 9.20. Size:189K  onsemi
 nvmfs015n10mcl.pdf 

MOSFET - Power, Single N-Channel 100 V, 12.2 mW, 47.1 A NVMFS015N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced 12.2 mW @ 10 V Optical Inspection 100 V 47.1 A 18.3 mW @

 9.21. Size:132K  onsemi
 nvmfs5c673n.pdf 

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NVMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical 60 V 10.7 mW @ 10 V 50 A Inspection AEC-Q101 Quali

 9.22. Size:172K  onsemi
 nvmfs6h801nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 2.7 mW, 160 A NVMFS6H801NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H801NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 2.7 mW @ 10 V AEC-Q101 Qualified and PPA

 9.23. Size:178K  onsemi
 nvmfs6h852n.pdf 

MOSFET - Power, Single N-Channel 80 V, 14.2 mW, 43 A NVMFS6H852N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie

 9.24. Size:247K  onsemi
 nvmfs5c628n.pdf 

MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A NVMFS5C628N Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 3.0 mW @ 10 V 150 A AEC-Q101 Qualifie

 9.25. Size:179K  onsemi
 nvmfs5c638nl.pdf 

NVMFS5C638NL MOSFET Power, Single N-Channel 60 V, 3.0 mW, 133 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical 3.0 mW @ 10 V Inspection 60 V 133 A AEC-Q101 Qua

 9.26. Size:795K  onsemi
 nvmfs5c677nl.pdf 

 9.27. Size:180K  onsemi
 nvmfs6h864n.pdf 

MOSFET - Power, Single N-Channel 80 V, 32 mW, 23 A NVMFS6H864N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H864NWF - Wettable Flank Option for Enhanced Optical 80 V 32 mW @ 10 V 23 A Inspection AEC-Q101 Qualified an

 9.28. Size:71K  onsemi
 nvmfs5833n.pdf 

NVMFS5833N Power MOSFET 40 V, 7.5 mW, 86 A, Single N-Channel, SO-8FL Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical 40 V 7.5 mW @ 10 V 86 A Inspection These Devices are Pb-Free and are RoHS Compliant D (5)

 9.29. Size:134K  onsemi
 nvmfs6d1n08h.pdf 

NVMFS6D1N08H Power MOSFET 80 V, 5.5 mW, 89 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFSW6D1N08H - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These

 9.30. Size:172K  onsemi
 nvmfs5h600nl.pdf 

MOSFET Power, Single N-Channel 60 V, 1.3 mW, 250 A NVMFS5H600NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.3 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

 9.31. Size:174K  onsemi
 nvmfs5c468n.pdf 

NVMFS5C468N MOSFET Power, Single N-Channel 40 V, 12 mW, 35 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NWF - Wettable Flank Option for Enhanced Optical 40 V 12 mW @ 10 V 35 A Inspection AEC-Q101 Qualified

 9.32. Size:172K  onsemi
 nvmfs6h818nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NVMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H818NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 3.2 mW @ 10 V AEC-Q101 Qualified and PPA

 9.33. Size:203K  onsemi
 nvmfs6h801n.pdf 

MOSFET Power, Single, N-Channel 80 V, 2.8 mW, 157 A NVMFS6H801N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H801NWF - Wettable Flank Option for Enhanced Optical Inspection 80 V 2.8 mW @ 10 V 157 A AEC-Q101 Quali

 9.34. Size:70K  onsemi
 nvmfs5c404n.pdf 

NVMFS5C404N Power MOSFET 40 V, 0.7 mW, 378 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 0.7

 9.35. Size:182K  onsemi
 nvmfs5c682nl.pdf 

NVMFS5C682NL MOSFET Power, Single N-Channel 60 V, 21 mW, 25 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical 21 mW @ 10 V 60 V 25 A Inspection 31.5 mW @ 4.5 V

 9.36. Size:123K  onsemi
 nvmfs4841n.pdf 

NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N-Channel SO8FL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are

 9.37. Size:177K  onsemi
 nvmfs5c673nl.pdf 

MOSFET Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMFS5C673NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical 9.2 mW @ 10 V 60 V 50 A Inspection 13 mW @ 4.5 V

 9.38. Size:283K  onsemi
 nvmfs5a160plz.pdf 

NVMFS5A160PLZ MOSFET Power, Single P-Channel -60 V, -100 A, 7.7 mW Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses VDSS RDS(ON) MAX ID MAX NVMFS5A160PLZWF Wettable Flank Option for Enhanced Optical -60 V 7.7 mW @ -10 V -100 A Inspection 10.5 mW @ -4.5 V AEC-Q101 Qualified and PPAP Capable Thes

 9.39. Size:110K  onsemi
 nvmfs5830nl.pdf 

NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are

 9.40. Size:121K  onsemi
 nvmfs6b75nl.pdf 

NVMFS6B75NL Power MOSFET 100 V, 30 mW, 28 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com NVMFS6B75NLWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These

 9.41. Size:128K  onsemi
 ntmfs5844nl nvmfs5844nl.pdf 

NTMFS5844NL, NVMFS5844NL MOSFET Power, Single, N-Channel 60 V, 61 A, 12 mW Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product 12 mW @ 10 V 60 V 61 A NVMFS Prefix for Automotive and

 9.42. Size:73K  onsemi
 nvmfs5c612nl.pdf 

NVMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.5 mW

 9.43. Size:177K  onsemi
 nvmfs5c426nl.pdf 

MOSFET Power, Single N-Channel 40 V, 1.2 mW, 237 A NVMFS5C426NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C426NLWF - Wettable Flank Option for Enhanced Optical 1.2 mW @ 10 V Inspection 40 V 237 A 1.8 mW @ 4.5 V

 9.44. Size:352K  onsemi
 nvmfs5a140plz.pdf 

NVMFS5A140PLZ MOSFET Power, Single P-Channel -40 V, -140 A, 4.2 mW Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses NVMFS5A140PLZWF Wettable Flank Option for Enhanced Optical VDSS RDS(ON) MAX ID MAX Inspection -40 V 4.2 mW @ -10 V -140 A AEC-Q101 Qualified and PPAP Capable 7.2 mW @ -4.5 V These

 9.45. Size:111K  onsemi
 nvmfs5885nl.pdf 

NVMFS5885NL Power MOSFET 60 V, 15 mW, 39 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVMFS5885NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Com

 9.46. Size:182K  onsemi
 nvmfs5c612n.pdf 

NVMFS5C612N Power MOSFET Single N-Channel, 60 V, 1.65 mW, 225 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 1.6

 9.47. Size:173K  onsemi
 nvmfs5c430n.pdf 

NVMFS5C430N MOSFET Power, Single N-Channel 40 V, 1.7 mW, 185 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NWF - Wettable Flank Option for Enhanced Optical 40 V 1.7 mW @ 10 V 185 A Inspection AEC-Q101 Qualif

 9.48. Size:196K  onsemi
 nvmfs6h800nl.pdf 

NVMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6H800NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable The

 9.49. Size:175K  onsemi
 nvmfs6h836nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NVMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NLWF - Wettable Flank Option for Enhanced Optical Inspection 6.2 mW @ 10 V 80 V 77 A AEC-Q101 Qualif

 9.50. Size:176K  onsemi
 nvmfs6h836n.pdf 

MOSFET - Power, Single N-Channel 80 V, 6.7 mW, 80 A NVMFS6H836N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NWF - Wettable Flank Option for Enhanced Optical Inspection 80 V 6.7 mW @ 10 V 80 A AEC-Q101 Qualified

 9.51. Size:176K  onsemi
 nvmfs020n06c.pdf 

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 mW, 28 A NVMFS020N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 19.6 mW @ 10 V 28 A AEC-Q101

 9.52. Size:191K  onsemi
 nvmfs5c406nl.pdf 

NVMFS5C406NL MOSFET Power, Single N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C406NLWF - Wettable Flank Option for Enhanced Optical 0.7 mW @ 10 V Inspection 40 V 362 A AEC-Q101 Qua

 9.53. Size:175K  onsemi
 nvmfs5c430nl.pdf 

 9.54. Size:175K  onsemi
 nvmfs016n06c.pdf 

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 mW, 33 A NVMFS016N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 15.6 mW @ 10 V 33 A AEC-Q101

 9.55. Size:70K  onsemi
 nvmfs4c05n.pdf 

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 3.4 mW

 9.56. Size:123K  onsemi
 nvmfs5c423nl.pdf 

NVMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.0 mW

 9.57. Size:173K  onsemi
 nvmfs5c468nl.pdf 

NVMFS5C468NL MOSFET Power, Single N-Channel 40 V, 10.3 mW, 37 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NLWF - Wettable Flank Option for Enhanced Optical 10.3 mW @ 10 V Inspection 40 V 37 A 17.6 mW @ 4.5 V

 9.58. Size:134K  onsemi
 nvmfs5c466n.pdf 

NVMFS5C466N MOSFET Power, Single N-Channel 40 V, 8.1 mW, 49 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C466NWF - Wettable Flank Option for Enhanced Optical 40 V 8.1 mW @ 10 V 49 A Inspection AEC-Q101 Qualifie

 9.59. Size:170K  onsemi
 nvmfs5h663nl.pdf 

NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 mW, 67 A www.onsemi.com NVMFS5H663NLWF - Wettable Flank Option for Enhanced Optical Inspection. V(BR)DSS RDS(ON) MAX ID MAX Features Small Footprint (5x6 mm) for Compact Design 7.2 mW @ 10 V 60 V 67 A Low RDS(on) to Minimize Conduction Losses 10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri

 9.60. Size:181K  onsemi
 nvmfs5c442n.pdf 

NVMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 2.3

 9.61. Size:117K  onsemi
 nvmfs5c670nl.pdf 

NVMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.1 mW @

 9.62. Size:175K  onsemi
 nvmfs6h824nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 4 mW, 110 A NVMFS6H824NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H824NLWF - Wettable Flank Option for Enhanced Optical Inspection 4 mW @ 10 V 80 V 110 A AEC-Q101 Qualified

 9.63. Size:74K  onsemi
 nvmfs4c03n.pdf 

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N-Channel Logic Level, SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses 2.1 mW @ 10 V 30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A 2.8 mW @ 4.5

 9.64. Size:179K  onsemi
 nvmfs5c645nl.pdf 

NVMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.0 mW

 9.65. Size:73K  onsemi
 nvmfs5c442nl.pdf 

NVMFS5C442NL Power MOSFET 40 V, 2.8 mW, 127 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com NVMFS5C442NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.8

 9.66. Size:173K  onsemi
 nvmfs6h864nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVMFS6H864NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 29 mW @ 10 V AEC-Q101 Qualified and PPAP C

 9.67. Size:177K  onsemi
 nvmfs5c406n.pdf 

MOSFET - Power, Single N-Channel 40 V, 0.8 mW, 353 A NVMFS5C406N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C406NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 0.8 mW @ 10 V 353 A AEC-Q101 Qualifie

 9.68. Size:118K  onsemi
 nvmfs5c426n.pdf 

NVMFS5C426N Power MOSFET 40 V, 1.3 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 1.3

 9.69. Size:73K  onsemi
 nvmfs4c01n.pdf 

NVMFS4C01N Power MOSFET 30 V, 0.9 mW, 319 A, Single N-Channel, Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical 0.9 mW @ 10 V Inspection 30 V 319 A

 9.70. Size:176K  onsemi
 nvmfs6h848nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NVMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 8.8 mW @ 10 V AEC-Q101 Qualified and PPAP

 9.71. Size:74K  onsemi
 nvmfs5c646nl.pdf 

NVMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.7 mW @

 9.72. Size:89K  onsemi
 nvmfs5834nl.pdf 

NVMFS5834NL Product Preview Power MOSFET 40 V, 9.3 mW, 76 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

 9.73. Size:109K  onsemi
 nvmfs4c310n.pdf 

NVMFS4C310N Power MOSFET 30 V, 51 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.0 mW @

 9.74. Size:178K  onsemi
 nvmfs6h852nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NVMFS6H852NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced Optical Inspection 13.1 mW @ 10 V 80 V 42 A AEC-Q101 Quali

 9.75. Size:178K  onsemi
 nvmfs6h858n.pdf 

MOSFET - Power, Single N-Channel 80 V, 20.7 mW, 32 A NVMFS6H858N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie

 9.76. Size:166K  onsemi
 nvmfs5c450n.pdf 

NVMFS5C450N MOSFET Power, Single N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C450NWF - Wettable Flank Option for Enhanced Optical 40 V 3.3 mW @ 10 V 102 A Inspection AEC-Q101 Qualif

 9.77. Size:122K  onsemi
 nvmfs5113pl.pdf 

NVMFS5113PL Power MOSFET -60 V, 14 mW, -64 A, Single P-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com NVMFS5113PLWF - Wettable Flanks Product NVM Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) ID Unique Site and Control Change Requirements; AEC-Q101 14 mW @ -

 9.78. Size:177K  onsemi
 nvmfs5c628nl.pdf 

 9.79. Size:104K  onsemi
 nvmfs5826nl.pdf 

NVMFS5826NL Power MOSFET 60 V, 24 mW, 26 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices and RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 24 mW @ 10 V 60 V MAXIMUM RATINGS

 9.80. Size:106K  onsemi
 ntmfs5844nlt1g nvmfs5844nl.pdf 

NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements;

 9.81. Size:179K  onsemi
 nvmfs5c456n.pdf 

MOSFET Power, Single N-Channel 40 V, 4.5 mW, 80 A NVMFS5C456N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NWF - Wettable Flank Option for Enhanced Optical 40 V 4.5 mW @ 10 V 80 A Inspection AEC-Q101 Qualifie

 9.82. Size:177K  onsemi
 nvmfs024n06c.pdf 

MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 mW, 25 A NVMFS024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

 9.83. Size:171K  onsemi
 nvmfs5c410n.pdf 

MOSFET - Power, Single N-Channel 40 V, 0.92 mW, 300 A NVMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 0.92 mW @ 10 V 300 A AEC-Q101 Qualif