NVMFS4C302N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFS4C302N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 241 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 2320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: SO8FL

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NVMFS4C302N datasheet

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 nvmfs4c302n.pdf pdf_icon

NVMFS4C302N

NVMFS4C302N Power MOSFET 30 V, 1.15 mW, 241 A, Single N-Channel Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical 1.15 mW @ 10 V Inspection 30 V 241 A

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 nvmfs4c310n.pdf pdf_icon

NVMFS4C302N

NVMFS4C310N Power MOSFET 30 V, 51 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.0 mW @

 7.1. Size:70K  onsemi
 nvmfs4c05n.pdf pdf_icon

NVMFS4C302N

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 3.4 mW

 7.2. Size:74K  onsemi
 nvmfs4c03n.pdf pdf_icon

NVMFS4C302N

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N-Channel Logic Level, SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses 2.1 mW @ 10 V 30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A 2.8 mW @ 4.5

MOSTRAR MÁS

Otros transistores... NVMFD6H840NL, NVMFD6H846NL, NVMFD6H852NL, NVMFS015N10MCL, NVMFS016N06C, NVMFS020N06C, NVMFS024N06C, NVMFS3D6N10MCL, IRFB4115, NVMFS4C310N, NVMFS5A140PLZ, NVMFS5A160PLZ, NVMFS5C406N, NVMFS5C406NL, NVMFS5C410N, NVMFS5C426N, NVMFS5C426NL