NVMFS4C302N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVMFS4C302N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 241 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 2320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: SO8FL

Búsqueda de reemplazo de MOSFET NVMFS4C302N

NVMFS4C302N Datasheet (PDF)

..1. Size:119K onsemi
nvmfs4c302n.pdf

NVMFS4C302NPower MOSFET30 V, 1.15 mW, 241 A, Single N-ChannelLogic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical1.15 mW @ 10 VInspection30 V241 A

6.1. Size:109K onsemi
nvmfs4c310n.pdf

NVMFS4C310NPower MOSFET30 V, 51 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.0 mW @

7.1. Size:70K onsemi
nvmfs4c05n.pdf

NVMFS4C05NPower MOSFET30 V, 116 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable3.4 mW

7.2. Size:74K onsemi
nvmfs4c03n.pdf

NVMFS4C03NPower MOSFET30 V, 2.1 mW, 143 A, Single N-ChannelLogic Level, SO-8FLFeatures http://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses2.1 mW @ 10 V30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A2.8 mW @ 4.5

7.3. Size:73K onsemi
nvmfs4c01n.pdf

NVMFS4C01NPower MOSFET30 V, 0.9 mW, 319 A, Single N-Channel,Logic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical0.9 mW @ 10 VInspection30 V319 A

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