Справочник MOSFET. NVMFS4C302N

 

NVMFS4C302N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVMFS4C302N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 241 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 2320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0015 Ohm
   Тип корпуса: SO8FL

 Аналог (замена) для NVMFS4C302N

 

 

NVMFS4C302N Datasheet (PDF)

 ..1. Size:119K  onsemi
 nvmfs4c302n.pdf

NVMFS4C302N NVMFS4C302N

NVMFS4C302NPower MOSFET30 V, 1.15 mW, 241 A, Single N-ChannelLogic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical1.15 mW @ 10 VInspection30 V241 A

 6.1. Size:109K  onsemi
 nvmfs4c310n.pdf

NVMFS4C302N NVMFS4C302N

NVMFS4C310NPower MOSFET30 V, 51 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.0 mW @

 7.1. Size:70K  onsemi
 nvmfs4c05n.pdf

NVMFS4C302N NVMFS4C302N

NVMFS4C05NPower MOSFET30 V, 116 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable3.4 mW

 7.2. Size:74K  onsemi
 nvmfs4c03n.pdf

NVMFS4C302N NVMFS4C302N

NVMFS4C03NPower MOSFET30 V, 2.1 mW, 143 A, Single N-ChannelLogic Level, SO-8FLFeatures http://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses2.1 mW @ 10 V30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A2.8 mW @ 4.5

 7.3. Size:73K  onsemi
 nvmfs4c01n.pdf

NVMFS4C302N NVMFS4C302N

NVMFS4C01NPower MOSFET30 V, 0.9 mW, 319 A, Single N-Channel,Logic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical0.9 mW @ 10 VInspection30 V319 A

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top