NVMFS5C460NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS5C460NL
Código: 5C460L_460LWF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 78 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 23 nC
Tiempo de subida (tr): 3.4 nS
Conductancia de drenaje-sustrato (Cd): 530 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NVMFS5C460NL
NVMFS5C460NL Datasheet (PDF)
nvmfs5c460nl.pdf
NVMFS5C460NLMOSFET Power, SingleN-Channel40 V, 4.5 mW, 78 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NLWF - Wettable Flank Option for Enhanced Optical4.5 mW @ 10 VInspection 40 V 78 A7.2 mW @ 4.5 V
nvmfs5c460n.pdf
NVMFS5C460NMOSFET Power, SingleN-Channel40 V, 5.3 mW, 71 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NWF - Wettable Flank Option for Enhanced OpticalInspection 40 V 5.3 mW @ 10 V 71 A AEC-Q101 Qualified
nvmfs5c468n.pdf
NVMFS5C468NMOSFET Power, SingleN-Channel40 V, 12 mW, 35 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NWF - Wettable Flank Option for Enhanced Optical40 V 12 mW @ 10 V 35 AInspection AEC-Q101 Qualified
nvmfs5c468nl.pdf
NVMFS5C468NLMOSFET Power, SingleN-Channel40 V, 10.3 mW, 37 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NLWF - Wettable Flank Option for Enhanced Optical10.3 mW @ 10 VInspection40 V 37 A17.6 mW @ 4.5 V
nvmfs5c466n.pdf
NVMFS5C466NMOSFET Power, SingleN-Channel40 V, 8.1 mW, 49 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C466NWF - Wettable Flank Option for Enhanced Optical40 V 8.1 mW @ 10 V 49 AInspection AEC-Q101 Qualifie
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