NVMFS6H852NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFS6H852NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 116 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0131 Ohm

Encapsulados: DFN5

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NVMFS6H852NL datasheet

 ..1. Size:178K  onsemi
 nvmfs6h852nl.pdf pdf_icon

NVMFS6H852NL

MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NVMFS6H852NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced Optical Inspection 13.1 mW @ 10 V 80 V 42 A AEC-Q101 Quali

 3.1. Size:178K  onsemi
 nvmfs6h852n.pdf pdf_icon

NVMFS6H852NL

MOSFET - Power, Single N-Channel 80 V, 14.2 mW, 43 A NVMFS6H852N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie

 5.1. Size:174K  onsemi
 nvmfs6h858nl.pdf pdf_icon

NVMFS6H852NL

MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A NVMFS6H858NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced Optical Inspection 19.5 mW @ 10 V 80 V 30 A AEC-Q101 Quali

 5.2. Size:178K  onsemi
 nvmfs6h858n.pdf pdf_icon

NVMFS6H852NL

MOSFET - Power, Single N-Channel 80 V, 20.7 mW, 32 A NVMFS6H858N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie

MOSTRAR MÁS

Otros transistores... NVMFS6H818NL, NVMFS6H824N, NVMFS6H824NL, NVMFS6H836N, NVMFS6H836NL, NVMFS6H848N, NVMFS6H848NL, NVMFS6H852N, IRF2807, NVMFS6H858N, NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, NVMTS0D4N04CL, NVMTS0D6N04C, NVMTS0D7N04C, NVMTS0D7N04CL