NVMFS6H852NL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVMFS6H852NL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 53 ns
Cossⓘ - Выходная емкость: 116 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0131 Ohm
Тип корпуса: DFN5
- подбор MOSFET транзистора по параметрам
NVMFS6H852NL Datasheet (PDF)
nvmfs6h852nl.pdf

MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANVMFS6H852NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced OpticalInspection13.1 mW @ 10 V80 V 42 A AEC-Q101 Quali
nvmfs6h852n.pdf

MOSFET - Power, SingleN-Channel80 V, 14.2 mW, 43 ANVMFS6H852NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie
nvmfs6h858nl.pdf

MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali
nvmfs6h858n.pdf

MOSFET - Power, SingleN-Channel80 V, 20.7 mW, 32 ANVMFS6H858NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM5A27NSFP | JCS5N50CT | 2N4393DCSM | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005
History: SM5A27NSFP | JCS5N50CT | 2N4393DCSM | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005



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