NVMTS0D4N04CL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMTS0D4N04CL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 244 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 553.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 147 nS

Cossⓘ - Capacitancia de salida: 9500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0004 Ohm

Encapsulados: POWER88

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NVMTS0D4N04CL datasheet

 ..1. Size:397K  onsemi
 nvmts0d4n04cl.pdf pdf_icon

NVMTS0D4N04CL

MOSFET - Power, Single N-Channel 40 V, 0.4 mW, 553.8 A NVMTS0D4N04CL Features Small Footprint (8x8 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 0.4 mW @ 10 V

 7.1. Size:285K  onsemi
 nvmts0d7n06cl.pdf pdf_icon

NVMTS0D4N04CL

MOSFET - Power, Single N-Channel 60 V, 0.68 mW, 477 A NVMTS0D7N06CL Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.68 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 477 A 0.90 mW @

 7.2. Size:246K  onsemi
 nvmts0d7n04cl.pdf pdf_icon

NVMTS0D4N04CL

NVMTS0D7N04CL MOSFET Power, Single N-Channel 40 V, 0.63 mW, 433 A Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.63 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 433 A 0.92 mW

 7.3. Size:389K  onsemi
 nvmts0d6n04c.pdf pdf_icon

NVMTS0D4N04CL

MOSFET Power, Single N-Channel 40 V, 0.48 mW, 533 A NVMTS0D6N04C Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Wettable Flank Plated for Enhanced Optical Inspection 40 V 0.48 mW @ 10 V 533 A AEC-Q101 Qualified and PPAP C

MOSTRAR MÁS

Otros transistores... NVMFS6H848N, NVMFS6H848NL, NVMFS6H852N, NVMFS6H852NL, NVMFS6H858N, NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, P60NF06, NVMTS0D6N04C, NVMTS0D7N04C, NVMTS0D7N04CL, NVMTS0D7N06CL, NVMYS4D6N04CL, NVR5124PL, NVTFS002N04C, NVTFS002N04CL