All MOSFET. NVMTS0D4N04CL Datasheet

 

NVMTS0D4N04CL Datasheet and Replacement


   Type Designator: NVMTS0D4N04CL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 244 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 553.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 147 nS
   Cossⓘ - Output Capacitance: 9500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0004 Ohm
   Package: POWER88
 

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NVMTS0D4N04CL Datasheet (PDF)

 ..1. Size:397K  onsemi
nvmts0d4n04cl.pdf pdf_icon

NVMTS0D4N04CL

MOSFET - Power, SingleN-Channel40 V, 0.4 mW, 553.8 ANVMTS0D4N04CLFeatures Small Footprint (8x8 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 0.4 mW @ 10 V

 7.1. Size:285K  onsemi
nvmts0d7n06cl.pdf pdf_icon

NVMTS0D4N04CL

MOSFET - Power, SingleN-Channel60 V, 0.68 mW, 477 ANVMTS0D7N06CLFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.68 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V477 A0.90 mW @

 7.2. Size:246K  onsemi
nvmts0d7n04cl.pdf pdf_icon

NVMTS0D4N04CL

NVMTS0D7N04CLMOSFET Power, SingleN-Channel40 V, 0.63 mW, 433 AFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.63 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 433 A0.92 mW

 7.3. Size:389K  onsemi
nvmts0d6n04c.pdf pdf_icon

NVMTS0D4N04CL

MOSFET Power, SingleN-Channel40 V, 0.48 mW, 533 ANVMTS0D6N04CFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Wettable Flank Plated for Enhanced Optical Inspection40 V 0.48 mW @ 10 V 533 A AEC-Q101 Qualified and PPAP C

Datasheet: NVMFS6H848N , NVMFS6H848NL , NVMFS6H852N , NVMFS6H852NL , NVMFS6H858N , NVMFS6H858NL , NVMFS6H864N , NVMFS6H864NL , AO3401 , NVMTS0D6N04C , NVMTS0D7N04C , NVMTS0D7N04CL , NVMTS0D7N06CL , NVMYS4D6N04CL , NVR5124PL , NVTFS002N04C , NVTFS002N04CL .

History: SWT22N65D | BUK9E4R4-80E | AP98T06GP-HF | 2SK4057-ZK-E2-AY | BLS60R150F-A | SLD70R420S2 | IXTQ96N25T

Keywords - NVMTS0D4N04CL MOSFET datasheet

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