NVMTS0D6N04C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMTS0D6N04C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 245 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 533 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27.9 nS
Cossⓘ - Capacitancia de salida: 7030 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00048 Ohm
Encapsulados: DFNW8
Búsqueda de reemplazo de NVMTS0D6N04C MOSFET
- Selecciónⓘ de transistores por parámetros
NVMTS0D6N04C datasheet
nvmts0d6n04c.pdf
MOSFET Power, Single N-Channel 40 V, 0.48 mW, 533 A NVMTS0D6N04C Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Wettable Flank Plated for Enhanced Optical Inspection 40 V 0.48 mW @ 10 V 533 A AEC-Q101 Qualified and PPAP C
nvmts0d7n06cl.pdf
MOSFET - Power, Single N-Channel 60 V, 0.68 mW, 477 A NVMTS0D7N06CL Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.68 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 477 A 0.90 mW @
nvmts0d7n04cl.pdf
NVMTS0D7N04CL MOSFET Power, Single N-Channel 40 V, 0.63 mW, 433 A Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.63 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 433 A 0.92 mW
nvmts0d7n04c.pdf
NVMTS0D7N04C MOSFET Power, Single N-Channel 40 V, 0.67 mW, 420 A Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard AEC-Q101 Qualified and PPAP Capable 40 V 0.67 mW @ 10 V 420 A Wettab
Otros transistores... NVMFS6H848NL, NVMFS6H852N, NVMFS6H852NL, NVMFS6H858N, NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, NVMTS0D4N04CL, 75N75, NVMTS0D7N04C, NVMTS0D7N04CL, NVMTS0D7N06CL, NVMYS4D6N04CL, NVR5124PL, NVTFS002N04C, NVTFS002N04CL, NVTFS003N04C
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2n1815 | 2sa1103 | 2sb435 | 2sc1096 | 2sc2058 | a1693 datasheet | bdw94c equivalent | c2389
