NVMTS0D7N06CL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMTS0D7N06CL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 294.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 477 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26.3 nS

Cossⓘ - Capacitancia de salida: 8490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00068 Ohm

Encapsulados: DFNW8

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NVMTS0D7N06CL datasheet

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NVMTS0D7N06CL

MOSFET - Power, Single N-Channel 60 V, 0.68 mW, 477 A NVMTS0D7N06CL Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.68 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 477 A 0.90 mW @

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NVMTS0D7N06CL

NVMTS0D7N04CL MOSFET Power, Single N-Channel 40 V, 0.63 mW, 433 A Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.63 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 433 A 0.92 mW

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NVMTS0D7N06CL

NVMTS0D7N04C MOSFET Power, Single N-Channel 40 V, 0.67 mW, 420 A Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard AEC-Q101 Qualified and PPAP Capable 40 V 0.67 mW @ 10 V 420 A Wettab

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NVMTS0D7N06CL

MOSFET Power, Single N-Channel 40 V, 0.48 mW, 533 A NVMTS0D6N04C Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Wettable Flank Plated for Enhanced Optical Inspection 40 V 0.48 mW @ 10 V 533 A AEC-Q101 Qualified and PPAP C

MOSTRAR MÁS

Otros transistores... NVMFS6H858N, NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, NVMTS0D4N04CL, NVMTS0D6N04C, NVMTS0D7N04C, NVMTS0D7N04CL, STP65NF06, NVMYS4D6N04CL, NVR5124PL, NVTFS002N04C, NVTFS002N04CL, NVTFS003N04C, NVTFS004N04C, NVTFS005N04C, NVTFS008N04C