NVMTS0D7N06CL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFET - Power, SingleN-Channel60 V, 0.68 mW, 477 ANVMTS0D7N06CLFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.68 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V477 A0.90 mW @

NVMTS0D7N04CLMOSFET Power, SingleN-Channel40 V, 0.63 mW, 433 AFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.63 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 433 A0.92 mW

NVMTS0D7N04CMOSFET Power, SingleN-Channel40 V, 0.67 mW, 420 AFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard AEC-Q101 Qualified and PPAP Capable40 V 0.67 mW @ 10 V 420 A Wettab

MOSFET Power, SingleN-Channel40 V, 0.48 mW, 533 ANVMTS0D6N04CFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Wettable Flank Plated for Enhanced Optical Inspection40 V 0.48 mW @ 10 V 533 A AEC-Q101 Qualified and PPAP C

MOSFET - Power, SingleN-Channel40 V, 0.4 mW, 553.8 ANVMTS0D4N04CLFeatures Small Footprint (8x8 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 0.4 mW @ 10 V